TRANSISTOR AOD412 Search Results
TRANSISTOR AOD412 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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TRANSISTOR AOD412 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AOD4128
Abstract: 304 pd
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Original |
aod4128o-252304 pd | |
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Contextual Info: AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4128 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in |
Original |
aod412827abc | |
AOD412
Abstract: AOD4128
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Original |
aod4128aod412o-2521e-05+1 | |
ao412
Abstract: ao41
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Original |
aod4120aod4120/laod4120l-ao4120l+3 | |
3V02
Abstract: aod41
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Original |
aod4122o-2523v02aod41 | |
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Contextual Info: Rev 2: June 2004 AOD412, AOD412L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use |
Original |
aod412aod412lo-252 | |
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Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
Original |
aod4120o-252draid4120 | |
AOD4120Contextual Info: AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
Original |
aod4120o-252currentod4120 | |
AOD412
Abstract: aoD412 transistor TRANSISTOR AOD412 AOD412L b100Current
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Original |
aod412aod412lo-252aod412 transistor+2 | |
AOD4120L
Abstract: AOD4120
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Original |
aod4120aod4120lo-252 | |
aoD412 transistorContextual Info: AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD412 uses advanced trench technology to provide excellent RDS ON , low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. |
Original |
aod412aod412lo-252aod412 transistor | |
TRANSISTOR D412
Abstract: D412 transistor d412 DPAK d412 omega D412 d-pak AOD412 JEDEC TO-252 LAND PATTERN alpha omega D412 D412 AOD412 30V 85A
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Original |
aod412o-252transistor d412d412 transistor+7 |