TRANSISTOR AO Search Results

NTE74LS194A

Abstract: NTE74181 NTE74LS181 NTE74LS193 NTE74193 32 bit carry select adder code NTE74S188 NTE74LS192 NTE74S181 NTE74S189
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator Input 5 0 Jj vcc Input AO 2 16-Lead DIP, See Drag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator

Contextual Info: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

sqd35J

Contextual Info: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)

IR2425

Abstract: N15V transistor array ir2425
Contextual Info: iS E o | SHARP ELEK/ MELEC D IV 01007^0 aoanB t. a | IR2425 6-Unit 150mA Transistor Array T - S 2 - / 3 -h 6 IR2425 • 6-Unit 150mA Transistor Array ■ Description Pin Connections The IR2425 is a 6-circuit driver. The internai clamping diodes enable the IC to drive the inductive

Contextual Info: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST4401 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Rating Symbol

UTC 7312

Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t
Contextual Info: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V

BP317

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3906/L PNP general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification PNP general purpose transistor PMBS3906/L FEATURES PINNING • Low current max. 100 mA

BP317

Abstract: transistor marking 44 sot23 marking AO4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PMBS3904/L NPN general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904/L FEATURES PINNING • Low current max. 100 mA

BFR134

Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
Contextual Info: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar

transistor EB 525

Abstract: TRANSISTOR 4148 ic 4148 5262n din 4148 N 4148 41873 CCB030 2N4036
Contextual Info: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: General Besondere Merkmale: Features: • • • Hohe Sperrspannung • Verlustleistung 7 W High reverse voltage Power dissipation 7 W Abmessungen in mm

BUK437-500A

Abstract: BUK437-500B buk437 S1216
Contextual Info: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

BUK455-50A

Abstract: BUK455-50B buk455 15 1E41 DPP100-24 T0220AB
Contextual Info: Philips Components BUK455-50A BUK455-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

TLP421GB

Abstract: TLP421 11-5B2 VDE0884 EN60065EN60950
Contextual Info: TO SH IBA TLP421 TOSHIBA PHOTOCOUPLER OFFICE EQUIPMENT GaAs IRED & PHOTO-TRANSISTOR TLP421 HOUSEHOLD APPLIANCES SOLID STATE RELAYS SWITCHING POWER SUPPLIES VARIOUS CONTROLLERS SIGNAL TRANSMISSION BETWEEN DIFFERENT VOLTAGE CIRCUITS The TOSHIBA TLP421 consists of a silicone photo-transistor

539 MOTOROLA transistor

Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Contextual Info: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

ic 4033

Abstract: 2n4033 0w08
Contextual Info: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendung: Kleinsignal und allgem ein Application: Sm all Signal and general purposes Besondere M erkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung

MCZ33937

Abstract: MCZ33937A mc3393 MC33937 ISO7637 MUR120 54-PIN 3 phase alternator automatic voltage regulator alternator circuit diagram
Contextual Info: Freescale Semiconductor Advance Information Document Number: 33937 Rev. 6.0, 9/2009 Three Phase Field Effect Transistor Pre-driver 33937 33937A The 33937 and 33937A are Field Effect Transistor FET predrivers designed for three phase motor control and similar

BF479

Abstract: Transistor BF 479 Mischstufen Transistor BF 479 t pnp rf transistor rcbo S55A TRANSISTOR BF479 CJCO
Contextual Info: Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: UHF/VHF-Hochstrom -Eingangs- und M ischslufen Applications: UHF/VHF-high current input and m ixer stages Besondere Merkmale: Features: • Hohe Kreuzm odulationsfestigkeit • • Hohe Verstärkung

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

Contextual Info: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.

TFK u 116

Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW

BUX22

Abstract: transistor BUX 22 transistor BUX BUX 115 P6021 sonde type k
Contextual Info: * B U X 22 NPN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TRANSISTOR S ILIC IU M NPN, MESA TRIPLE DIFFUSE ^P re fe rre d device D isp o sitif recommandé High speed, high voltage, high pow er transistor Transistor de puissance rapide, haute tension