TRANSISTOR AO Search Results

BFR64

Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Contextual Info: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NTE74LS194A

Abstract: NTE74181 NTE74LS181 NTE74LS193 NTE74193 32 bit carry select adder code NTE74S188 NTE74LS192 NTE74S181 NTE74S189
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator Input 5 0 Jj vcc Input AO 2 16-Lead DIP, See Drag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

IR2405

Contextual Info: SHARP E L E K / M ELEC i SE o | D IV aiaa?^ aoai^a . ? ! IR2405 6-Unit 400mA Darlington Transistor Array T ' 5 2 - / 3 - * 7 y— IR2405 • 6-Unit 400mA Darlington Transistor Array Pin Connections Description The IR2405 is a 6-circuit driver. This IC can be

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74150 24-Lead DIP, See Diag. 252 1—of—16 Data Selector/Multiplexer I E E Data Inpu Data Inpu V cc Data Inpu Output EO Data Inpu 4 | Q Output GS Data Inpu input 3 Data inpu Q Input 2 Data Jnpu Output AO

BF 145 transistor

Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Contextual Info: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance

SD1451

Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
Contextual Info: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor

sqd35J

Contextual Info: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)

IR2425

Abstract: N15V transistor array ir2425
Contextual Info: iS E o | SHARP ELEK/ MELEC D IV 01007^0 aoanB t. a | IR2425 6-Unit 150mA Transistor Array T - S 2 - / 3 -h 6 IR2425 • 6-Unit 150mA Transistor Array ■ Description Pin Connections The IR2425 is a 6-circuit driver. The internai clamping diodes enable the IC to drive the inductive

Contextual Info: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST4401 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Rating Symbol

BC108 characteristic

Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

ph-13 transistor

Abstract: BC517
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

Contextual Info: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: TOSHIBA 2SD2386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2386 High Breakdown Voltage : V^EO = 140 V (Min.) Complementary to 2SB1557 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

BC237

Abstract: equivalent to BC177 2n6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

CQ 730

Abstract: Thomson-CSF SD1078 Thomson-CSF amplifier TWX510-661-7299 80WpeP Solid State Microwave
Contextual Info: □ mc d | S G S-TH O M SO N a ao aia M 7 ^ 2 3 ? a | r~; SOLID STATE MICROWAVE SD1078 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215} 362-8500 * TW X510-661-7299 2-30 MHz, 28 V SSB POWER TRANSISTOR DESCRIPTION The SD1078 is a 28 volt epitaxial silicon NPN planar transistor designed

BP317

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3906/L PNP general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification PNP general purpose transistor PMBS3906/L FEATURES PINNING • Low current max. 100 mA