TRANSISTOR AO Search Results

BFR64

Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Contextual Info: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NTE74LS194A

Abstract: NTE74181 NTE74LS181 NTE74LS193 NTE74193 32 bit carry select adder code NTE74S188 NTE74LS192 NTE74S181 NTE74S189
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator Input 5 0 Jj vcc Input AO 2 16-Lead DIP, See Drag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: N AMER PHILIPS/DISCRETE X7 DbE D b b S B ' m aoisaii o RZ1214B35Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

IR2405

Contextual Info: SHARP E L E K / M ELEC i SE o | D IV aiaa?^ aoai^a . ? ! IR2405 6-Unit 400mA Darlington Transistor Array T ' 5 2 - / 3 - * 7 y— IR2405 • 6-Unit 400mA Darlington Transistor Array Pin Connections Description The IR2405 is a 6-circuit driver. This IC can be

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74150 24-Lead DIP, See Diag. 252 1—of—16 Data Selector/Multiplexer I E E Data Inpu Data Inpu V cc Data Inpu Output EO Data Inpu 4 | Q Output GS Data Inpu input 3 Data inpu Q Input 2 Data Jnpu Output AO

BF 145 transistor

Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Contextual Info: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance

SD1451

Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
Contextual Info: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor

sqd35J

Contextual Info: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)

IR2425

Abstract: N15V transistor array ir2425
Contextual Info: iS E o | SHARP ELEK/ MELEC D IV 01007^0 aoanB t. a | IR2425 6-Unit 150mA Transistor Array T - S 2 - / 3 -h 6 IR2425 • 6-Unit 150mA Transistor Array ■ Description Pin Connections The IR2425 is a 6-circuit driver. The internai clamping diodes enable the IC to drive the inductive

Contextual Info: Panasonic Others A N 90C00 Series Transistor Arrays 4-circuit • Overview T h e A N 90C 00 series transistor arrays are monolithic ICs which have 4 transistor em itters com m only used. They are provided in 9-pin plastic SIL packages and can improve mounting density by miniaturization of the sets.

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST4401 SWITCHING TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Rating Symbol

TRANSISTOR FS 10 TM

Abstract: TRANSISTOR b100
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

BC108 characteristic

Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

ph-13 transistor

Abstract: BC517
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

1518 B TRANSISTOR

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

Contextual Info: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

Contextual Info: TOSHIBA 2SD2386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2386 High Breakdown Voltage : V^EO = 140 V (Min.) Complementary to 2SB1557 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with lowthermal resistance. Intended