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    TRANSISTOR AMP Search Results

    TRANSISTOR AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy

    TRANSISTOR AMP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor

    Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
    Contextual Info: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor


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    x13769xj2v0cd00o-126mp-25o-220+15mp-40mp-45mp-45fmp-80mp-10transistorpower mos fet 2sj 2sktransistor 2sk2sk typen channel fet arraylow frequency power transistortransistor mp40transistor p 3high hfe transistorlist PDF

    Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


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    bd239cbd240co-220 PDF

    nec 620

    Abstract: 2SD1582 hFE transistor high hfe transistor
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is


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    2sd1582nec 620hfe transistorhigh hfe transistor PDF

    BD239C

    Abstract: BD240C JESD97 transistor marking 1a
    Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance


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    bd239cbd240co-220jesd97+1transistor marking 1a PDF

    2SC3603

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


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    2sc3603 PDF

    2SD1581

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is


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    2sd1581 PDF

    2X MARKING CODE SOT23

    Abstract: 2n4401 052
    Contextual Info: MMBT4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT4403 is recommended. • This transistor is also available in the TO-92 case


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    mmbt4401mmbt44032n4401ot-23+6mmbt4401-gs18mmbt4401-gs08d-7402519-may-042x marking code sot232n4401 052 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


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    2sc3603 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2sc3587 PDF

    transistor 18971

    Abstract: MMBT4401G TRANSISTOR marking code vishay MMBT4401-GS18
    Contextual Info: MMBT4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT4403 is recommended. • This transistor is also available in the TO-92 case


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    mmbt4401mmbt44032n4401ot-23+7mmbt4401-gs18mmbt4401-gs08d-7402524-may-04transistor 18971mmbt4401gtransistor marking code vishay PDF

    D1615

    Abstract: transistor ab2 12
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


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    2sd24252sb1578c11531ed1615+1transistor ab2 12 PDF

    2SD2402

    Abstract: transistor 2sD2402 Transistor Marking EY
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


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    2sd24022sb1571transistor 2sd2402transistor marking ey PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


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    2sd24032sb1572 PDF

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2sc360415obotsnec k 2500n transistor nec k 2500+72sc1223transistor marking s002sc2367nec marking bnec part number marking2sc36032sc2150 PDF

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2sc36042sc36032sc21502sc1223+2transistor 2sc 5250micro x PDF

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2sc3587pt 4304 a transistornoise diode PDF

    2T marking

    Contextual Info: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


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    mmbt4403mmbt44012n4403ot-23+5mmbt4403-gs18mmbt4403-gs08d-7402524-may-042t marking PDF

    2N3904 1AM

    Abstract: MARKING 1AM 1AM marking transistor mmbt3904 vishay transistor marking 1am MMBT3904 1am TRANSISTOR marking code vishay 2N3904 SOT-23
    Contextual Info: MMBT3904 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT3906 is recommended. • This transistor is also available in the TO-92 case


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    mmbt3904mmbt39062n3904ot-23+12mmbt3904-gs18mmbt3904-gs08d-7402519-may-042n3904 1ammarking 1am1am marking transistormmbt3904 vishaytransistor marking 1ammmbt3904 1amtransistor marking code vishay2n3904 sot-23 PDF

    2N3904

    Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
    Contextual Info: 2N3904 TRANSISTOR NPN PRODUCT SUMMARY TO-92 Plastic-Encapsulate Transistors TO-92 FEATURES NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with


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    2n39042n3906ot-23mmbt3904+92n3904 transistor pnp2n3904 transistor2n3904, transistor2n3904 plastic22n3904data sheet transistor 2n390603 transistor2n3904 sot-232n3904 transistor data sheet free download PDF

    97CC

    Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
    Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection


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    cb-1997cctransistor esm 16transistor esm 30+2esm18transistor esm 18 PDF

    NEC RELAY

    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


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    2sd2163nec relay PDF

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


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    2sc3587transistor nec d 586nec a 634nec d 586+2nec k 2500nec 3500 PDF

    2n3904 transistor

    Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
    Contextual Info: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR( NPN ) TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with


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    2n3904o--922n3906ot-23+10mmbt3904lt1100khz100mhz2n3904 transistor2n3904, transistor2n3904 equivalent2n3904 sot-232n3904 transistor data sheet free download2n3906 pnp transistor dc current gain2n3904 transistor pnp PDF

    pin configuration transistor 2n4401

    Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
    Contextual Info: 2N4401 Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


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    2n44012n4403ot-23mmbt4401+92n4401-bulk2n4401-tapd-7402514-oct-04pin configuration transistor 2n44012n4401 national semiconductor2n4401 configuration2n4401 - transistor2n4403 national semiconductor PDF