TRANSISTOR AMP Search Results

transistor NEC D 586

Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise

2SD2161

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3810 is an NPN silicon epitaxial dual transistor having 5.0 MIN.

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: UTC TIP31C NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip32C TO-251

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C

2SC4225

Abstract: 9015 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.

2SC2945

Abstract: QK SOT89 2SC2954 mark qk sot
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF

transistor NEC D 822 P

Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.

SO642

Abstract: SO692
Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3

2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

2SA1897

Abstract: C11531E
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING UNIT: mm for high current control in small dimension. This transistor is ideal

TRANSISTOR K 314

Abstract: NEC semiconductor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

BUH100

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort BUH100 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

MP 1009 es

Abstract: transistor marking R37 ghz nec 0882 ZO 607 transistor transistor 7813 transistor NEC D 882 p 2SC4094 P10366EJ1V1DS00 gre 0723
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

Contextual Info: KST6428 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES

Contextual Info: TOSHIBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2387 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SD2385 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: CRO BFX48 PNP SILICON TRANSISTOR DESCRIPTION BFX48 is PNP silicon transistor designed for general purpose, saturated switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous