TRANSISTOR AMP Search Results
TRANSISTOR AMP Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CA3130AT/B | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130AT | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| HA2-2541-2 | Rochester Electronics LLC | HA2-2541 - Operational Amplifier |
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TRANSISTOR AMP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
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x13769xj2v0cd00o-126mp-25o-220+15 | |
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Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance |
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bd239cbd240co-220 | |
nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
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2sd1582nec 620hfe transistorhigh hfe transistor | |
BD239C
Abstract: BD240C JESD97 transistor marking 1a
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bd239cbd240co-220jesd97+1 | |
2SC3603Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise |
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2sc3603 | |
2SD1581Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is |
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2sd1581 | |
2X MARKING CODE SOT23
Abstract: 2n4401 052
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mmbt4401mmbt44032n4401ot-23+6 | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise |
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2sc3603 | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise |
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2sc3587 | |
transistor 18971
Abstract: MMBT4401G TRANSISTOR marking code vishay MMBT4401-GS18
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mmbt4401mmbt44032n4401ot-23+7 | |
D1615
Abstract: transistor ab2 12
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2sd24252sb1578c11531ed1615+1 | |
2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
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2sd24022sb1571transistor 2sd2402transistor marking ey | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for |
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2sd24032sb1572 | |
NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
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2sc360415obotsnec k 2500n transistor nec k 2500+7 | |
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2SC2150
Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
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2sc36042sc36032sc21502sc1223+2 | |
PT 4304 a transistor
Abstract: 2SC3587 noise diode
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2sc3587pt 4304 a transistornoise diode | |
2T markingContextual Info: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case |
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mmbt4403mmbt44012n4403ot-23+5 | |
2N3904 1AM
Abstract: MARKING 1AM 1AM marking transistor mmbt3904 vishay transistor marking 1am MMBT3904 1am TRANSISTOR marking code vishay 2N3904 SOT-23
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mmbt3904mmbt39062n3904ot-23+12 | |
2N3904
Abstract: 2n3904 TRANSISTOR PNP 2n3904 transistor 2N3904, transistor 2N3904 plastic 22N3904 data sheet transistor 2n3906 03 transistor 2N3904 SOT-23 2N3904 transistor data sheet free download
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2n39042n3906ot-23mmbt3904+9 | |
97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
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cb-1997cctransistor esm 16transistor esm 30+2 | |
NEC RELAYContextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct |
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2sd2163nec relay | |
transistor NEC D 586
Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
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2sc3587transistor nec d 586nec a 634nec d 586+2 | |
2n3904 transistor
Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP
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2n3904o--922n3906ot-23+10 | |
pin configuration transistor 2n4401
Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
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2n44012n4403ot-23mmbt4401+9 | |