TRANSISTOR ALY Search Results

2SC3875

Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
Contextual Info: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

ALY TRANSISTOR

Abstract: transistor ALY 8 transistor ALY
Contextual Info: POSITIVE THERMISTORS "Posi-R" • nichicon For Overcurrent Protection Characteristic of ZPC4MCE100D When som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor

ALY TRANSISTOR

Abstract: transistor ALY
Contextual Info: POSITIVE THERMISTORS "Posi-R" • For Overcurrent Protection W hen som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor at the transformer or the switching power supply generates heat

ALY TRANSISTOR

Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23

COIL IGNITION

Abstract: MGB15N35CL MGB15N35CLT4 MGC15N35CL MGP15N35CL direct fuel Injection gp15n35cl
Contextual Info: MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

MGB15N40CL

Abstract: MGB15N40CLT4 MGC15N40CL MGP15N40CL MGP15N40CL-D GB15N40CL
Contextual Info: MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: MGP15N43CL, MGB15N43CL, MGC15N43CL Product Preview Internally Clamped http://onsemi.com N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Marking ALY

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

QSC60xx

Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
Contextual Info: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low

ALY TRANSISTOR

Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

AN569

Abstract: MMSF3350 MMSF3350R2 SMD310
Contextual Info: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.

Contextual Info: MMSF3350 WaveFET HDTMOS™ Single N−Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage

ALY TRANSISTOR

Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
Contextual Info: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor smd ALG

Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE: hFE=70-700 · Low noise : NF=1dB(Typ),10dB(Max) · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

KTC3875

Abstract: ALG Transistor MARKING
Contextual Info: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE

Contextual Info: SEMICONDUCTOR mmm TECHNICAL DATA 2N4416A N-Channel, Small-Signal Field Effect Transistor M A X IM U M R A T IN G S Rating Symbol Value Unit Drain-Source Voltage Vos 35 Vdc Drain-Gate Voltage VDG 35 Vdc Gate-Source Voltage VGS -3 5 Gate Current Storage Temperature Range

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

a20 so-8

Abstract: smd mosfet so-8 transistor smd marking CS 2f3 smd 1N4148 1N5818 CS51033 CS51033EDR8 CS51033EN8 CS51033GD8
Contextual Info: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,

CS1515

Contextual Info: Back CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,

CS51033

Abstract: CS51033GD8 CS51033GDR8 CS51033YD8 CS51033YDR8 IRF7404 1N4148 1N5818 1N5821
Contextual Info: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in dc–dc converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor, fixed

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transistor parameters

Abstract: 2x104 n-mosfet transistor oscillator circuit transistor use in oscillator
Contextual Info: C ircu it S e n s itiv ity A n a ly sis in T erm s o f P r o c e s s P a ra m e te r s M .J. van D o rt1 and D .B .M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands. A n ew m eth o d o lo g y for s e n s itiv ity an alysis a t circu it