TRANSISTOR ALG 20 Search Results

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

ALY TRANSISTOR

Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

ALY TRANSISTOR

Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
Contextual Info: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC3875

Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
Contextual Info: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

KTC3875

Abstract: ALG Transistor MARKING
Contextual Info: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE

equivalent sb5100

Abstract: EE25 transformer t1 EE25 core PKS605PN 1N4007 equivalent ALG TRANSISTOR diode FR107 equivalent t1 ee25 EE25 bobbin PC817A
Contextual Info: DI-151 Design Idea PeakSwitch Audio Amplifier Power Supply Application Device Power Output Input Voltage Output Voltage Topology Audio PKS605PN 24 W, 36 W peak 90 – 265 VAC 12 V Flyback Design Highlights • Universal input voltage range • Efficiency meets CEC/ENERGY STAR requirements for 2008

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage

ALY Transistor MARKING

Contextual Info: MCC TM Micro Commercial Components KTC3875-Y KTC3875-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • High hFE and Low Noise Complementary to KTA1504 Lead Free Finish/Rohs Compliant "P"Suffix designates

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

ALY TRANSISTOR

Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

BFW17A

Abstract: bfw17a philips semiconductor
Contextual Info: Philips Semiconductors b b s a 'm Ü Q3 S 1 3 3 T21 AP X Product specification NPN 1 GHz wideband transistor BFW17A N AUER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E T> PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

aly smd

Abstract: transistor smd ALG
Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity

transistor smd ALG

Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE: hFE=70-700 · Low noise : NF=1dB(Typ),10dB(Max) · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: ^ 7 * 7 1 SCS-THOMSON TE A 2031A HD g ®[E[L[lOT(Q EOö i COLOR TV EAST-WEST CORRECTION • BUILD IN FRAME PARABOLA FROM EXTER­ NAL SAW-TOOTH ■ PARABOLA CORRECTION ADJUSTMENT ■ KEYSTONE CORRECTION ADJUSTMENT ■ LINE SIZE ADJUSTMENT ■ LINE DYNAMIC CORRECTION POSSIBILITY

transistor BFT 95

Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !

ALG TRANSISTOR

Abstract: transistor PNP ALG transistor BC 368
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage

transistor 6bt

Abstract: DC/transistor 6bt
Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

K 2645 transistor

Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Contextual Info: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W

1N53538

Abstract: pks606pn ee25 transformer pulse transformer with EE25 core zENER DIODE P6KE200A ferrite ee25 k 815 MOSFET ee25 10 pin transformer PC817D EE25 bobbin
Contextual Info: DI-134 Design Idea PeakSwitch Audio Amplifier Power Supply Application Device Power Output Input Voltage Output Voltage Topology Audio PKS606PN 20 W, 43 W peak 90 – 265 VAC 12 V Flyback Design Highlights • Delivers >2X peak power without output distortion

TOP258MN

Abstract: DIODE 1N4007 Functions equivalent for TOP258MN top258 ic top258mn ic printer inkjet inkjet printer circuit 1N4007 operating frequency topswitch-hx diode zener 1n4007
Contextual Info: DI-143 Design Idea TOPSwitch-HX High Efficiency Inkjet Power Supply Provides up to 80 Watts of Peak Power Application Device Power Output Input Voltage Output Voltage Topology Inkjet Printer TOP258MN 20 W cont, 80 W pk 90 – 264 VAC 32 V Flyback Design Highlights

EE25 core

Abstract: 1n53538 EE25 transformer pulse transformer with EE25 core PC817D ferrite ee25 ee25 ferrite core ee25 10 pin transformer PKS606P t1 EE25 core
Contextual Info: Design Idea DI-134 PeakSwitch Audio Amplifier Power Supply Application Device Power Output Input Voltage Output Voltage Topology Audio PKS606P 20 W, 43 W peak 90-265 VAC 12 V Flyback Design Highlights snubber R7 and C11 reduce EMI by damping high-frequency

PR14X8

Abstract: transistor smd ALG DPA424 DPA424G lm431 smd UV 471 DER-43 EN55022B LM431 transistor tip 3005
Contextual Info: Design Example Report Title 24.5W Power Supply using DPA424G Specification Input: -40 VDC Output: -28V / 480mA, -65 V / 170mA Application Telecom Line Card Author Power Integrations Applications Department Document Number DER-43 Date November 18, 2004 Revision