TRANSISTOR ALG Search Results
TRANSISTOR ALG Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR ALG Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ULN2083A-1
Abstract: kd 617 ULN 232 KD transistor transistor KD 617 ULN-2083A-1 ULN2031A Transistor Array differential amplifier ULN-2031A
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0S0M33Ô 03824J) ULN-2083A-1 ULN-2083A ULN-2031A LN-2086A, ULN2083A-1 kd 617 ULN 232 KD transistor transistor KD 617 ULN2031A Transistor Array differential amplifier | |
RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
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RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS | |
electronic organ
Abstract: ALLEGRO M I C R O S Y S T E M S INC
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OCR Scan |
ULN-2047A 16-lead 16-pin -2031A ULN-2086A, ULS-2045H ULS-2083H, electronic organ ALLEGRO M I C R O S Y S T E M S INC | |
Contextual Info: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. |
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RN49A6FS | |
RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
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RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS | |
Contextual Info: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. |
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RN49A6FS | |
RN4993FSContextual Info: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count. |
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RN4993FS RN4993FS | |
C 2944 transistorContextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • 05014330 000373=1 1 ■ ALGR T-91-01 PROCESS VRB Process VRB NPN Small-Signal Transistor Process VRB is an NPN double-diffused silicon epitaxial planar transistor designed for generalpurpose amplifier and switching circuits. |
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05D433S T-91-01 T-9U01 -H08J C 2944 transistor | |
K1 transistor datasheets
Abstract: HCPL-0452 HCPL-0500 HCPL-0501 HCPL0500
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HCPL-0500 HCPL-0501 HCPL-0500, HCPL-0501 HCPL-0452 E90700) DS300393 K1 transistor datasheets HCPL-0452 HCPL-0500 HCPL0500 | |
RN4984FSContextual Info: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. |
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RN4984FS RN4984FS | |
diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
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DARLINGTON TRANSISTOR ARRAYContextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform |
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M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY | |
M54585FP
Abstract: 24 "transistor array"
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M54585FP 500mA M54585FP 500mA) 24 "transistor array" | |
Contextual Info: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. |
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RN4984FS | |
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Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform |
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M63840KP 500mA M63840KP 500mA) 20P2F-A | |
M54513FP
Abstract: M5451
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M54513FP M54513FP M5451 | |
Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of |
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RN1112MFV RN1113MFV | |
Contextual Info: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current |
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M54585FP 500mA M54585FP 500mA) 20P2N-A | |
HCPL-0452
Abstract: HCPL-0500 HCPL-0501 HCPL0452 HCPL0500
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HCPL-0452 HCPL-0500 HCPL-0501 HCPL-0500, HCPL-0501 HCPL-0452 E90700) HCPL-0500 HCPL0452 HCPL0500 | |
IEC60747-5-5
Abstract: HCPL2531M
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6N135M, 6N136M, HCPL4503M HCPL2530M, HCPL2531M HCPL4503M, HCPL2531M IEC60747-5-5 | |
Contextual Info: Single-Channel: 6N135M, 6N136M, HCPL4503M Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers Features Description • High Speed –1 MBit/s The HCPL4503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. |
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6N135M, 6N136M, HCPL4503M HCPL2530M, HCPL2531M HCPL4503M, HCPL2531M | |
Contextual Info: <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low inputcurrent supply. |
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M54513FP M54513FP 20P2N-A | |
HCPL0500
Abstract: HCPL0452 HCPL0453 HCPL0501 HCPL0530 HCPL0531 HCPL0534
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HCPL0452 HCPL0530 HCPL0453 HCPL0531 HCPL0500 HCPL0534 HCPL0501 HCPL05XX, HCPL04XX HCPL0500 HCPL0452 HCPL0453 HCPL0501 HCPL0530 HCPL0531 HCPL0534 | |
DARLINGTON TRANSISTOR ARRAYContextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high |
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M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY |