TRANSISTOR AG 307 Search Results

UGN3076T

Abstract: UGN3076 UGS3076T
Contextual Info: UGN-3076T/U AND UGS-3076T/U HALL EFFECT BIPOLAR DIGITAL LATCHES UGN-3076T/U AND UGS-3076T/U BIPOLAR HALL EFFECT DIGITAL LATCHES FEATURES • • • • • • Operable with Inexpensive Multipole Ring Magnets High Reliability — No Moving Parts Small Size

d408

Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

LT 7210

Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

400M

Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to

LT 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101 074c RF POWER amplifier 10 watt
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to

430M

Abstract: 470M RA30H4047M1 400M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7210

Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

RA60H4047M1-101

Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7245

Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

Alcohol detection with vehicle controlling

Abstract: human detection sensors Reflective Sensor IR Parking sensor 46s smd transistor human detection sensor internal circuit design diagram of automatic ticket vending machine A773 MQ 6 gas SENSOR pin diagram panasonic motion sensor for out door automatic teller machine diagram
Contextual Info: GENERAL CATALOG BUILT-IN SENSORS 09/2010 Built-in Sensor 09/2010 Built-in Sensor Table of content Built-in Sensor Selector Chart .4 GS2 Sensor .8

RA45H8994M1

Abstract: RA45H8994M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

RA45H8994M1

Abstract: RA45H8994M1-101 D3060
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

bts 410G2 smd

Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A BTS 307
Contextual Info: PROFET BTS 307 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection

410G2

Abstract: 410G 410H2 BTS 307
Contextual Info: • «235b05 0012bi7 n i ■ SIEMENS PROFET BTS 307 Smart Highside Power Switch Features * * * * * * * * * * * * Overtoad protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads

UGN3077U

Abstract: UGS-3077U UGN-3077T UGN-3077U SENSOR HALL 452 hall current sensor 3A UGN3077 Sprague Hall Effect 820 572 711 UGS-3077T
Contextual Info: U G N -3 0 7 7T /U A N D U G S -3 0 77T/U H A LL EFFECT LATCHES FOR BRUSHLESS DC M O T O R C O N TR O L UGN-3077T/U AND UGS-3077T/U HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL —Symmetrical Duty Cycle FEATURES • Symmetrical Output • For Use with Multipole Ring Magnets

Contextual Info: AS5035 PROGRAMMABLE 64 PPR INCREMENTAL MAGNETIC ROTARY ENCODER 1 2 General Description DATA SHEET Key Features The AS5035 is a magnetic incremental encoder with 64 quadrature pulses per revolution 8-bit resolution and index output. - Full turn (360°) contactless angular position encoder

BMN-35H

Abstract: gaussmeter rotary encoder volume AustriaMicrosystems 3D Hall AS5035 AS5035TR AS5040 SSOP16 SSOP-16 cylindrical permanent magnet
Contextual Info: AS5035 PROGRAMMABLE 64 PPR INCREMENTAL MAGNETIC ROTARY ENCODER 1 General Description 2 DATA SHEET Key Features The AS5035 is a magnetic incremental encoder with 64 quadrature pulses per revolution 8-bit resolution and index output. - Full turn (360°) contactless angular position encoder

transistor AG 307

Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A
Contextual Info: PROFET BTS 307 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection

mje 3003

Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
Contextual Info: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures

TC9159P

Abstract: tc9158p
Contextual Info: h' lifmiir B 9 0 9 7 2 4 7 TO SHIBA. ELECTRONIC i g 02E » ? 18102 T-77-2Í TC9158P, TC9159P RECEIVING FREQUENCY DYNAMIC DRIVER. - Unit in mm The TC9158P/TC9159P is a receiving frequency display driver developed for the DTS-6/8. This driver latches serial data transferred from

4011N

Abstract: 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb
Contextual Info: Leiterplattenführung horizontal Horizontal Press-in Card Guide CGI-W-160 r Nur eine Standardlänge speziell für Leiterplatten mit max. 2,3 mm Stärke, Wandhöhe 2,4 mm. One standard lenght for PCBs with max. 2,3 mm thickness, wall height 2,4 mm. r Montage: / Mounting:

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from