TRANSISTOR AG 307 Search Results

d408

Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

LT 7210

Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

400M

Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to

lt 7210

Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

RA60H4047M1-101

Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7245

Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RA45H8994M1

Abstract: RA45H8994M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

RA45H8994M1

Abstract: RA45H8994M1-101 D3060
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

410G2

Abstract: 410G 410H2 BTS 307
Contextual Info: • «235b05 0012bi7 n i ■ SIEMENS PROFET BTS 307 Smart Highside Power Switch Features * * * * * * * * * * * * Overtoad protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads

UGN3077U

Abstract: UGS-3077U UGN-3077T UGN-3077U SENSOR HALL 452 hall current sensor 3A UGN3077 Sprague Hall Effect 820 572 711 UGS-3077T
Contextual Info: U G N -3 0 7 7T /U A N D U G S -3 0 77T/U H A LL EFFECT LATCHES FOR BRUSHLESS DC M O T O R C O N TR O L UGN-3077T/U AND UGS-3077T/U HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL —Symmetrical Duty Cycle FEATURES • Symmetrical Output • For Use with Multipole Ring Magnets

BMN-35H

Abstract: gaussmeter rotary encoder volume AustriaMicrosystems 3D Hall AS5035 AS5035TR AS5040 SSOP16 SSOP-16 cylindrical permanent magnet
Contextual Info: AS5035 PROGRAMMABLE 64 PPR INCREMENTAL MAGNETIC ROTARY ENCODER 1 General Description 2 DATA SHEET Key Features The AS5035 is a magnetic incremental encoder with 64 quadrature pulses per revolution 8-bit resolution and index output. - Full turn (360°) contactless angular position encoder

Contextual Info: KSD362 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT TO-220 • Collector-Base Voltage VCbo=150V • Collector Current lc =5A • Collector Dissipation PC=40W Tc =25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: 1 6 1993 July 1992 Edition 1.0 FUJITSU DATA SHEET M B 1 5 1 4 SERIAL INPUT PLL FREQUENCY SYNTHESIZER DUAL SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 400MHz PRESCALER The Fujitsu MB1514 is a dual serial input PLL phase locked loop frequency syn­ thesizer designed for cordless telephone applications.

BUX37

Abstract: transistor da 307 dg173 TO-204AA transistor
Contextual Info: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W

b44066d7050

Abstract: B44066S7410J230 VDE 0660 iec 337 pt EPCOS 230 04 EPCOS 230 - 04 IR SENSOR TDK 1838 B44066-S7410-J230 B44066-R6012-E230 SIEMENS epcos CAPACITORS 13340 B44066-S3210-J230
Contextual Info: EPCOS Product Profile 2015 Power Factor Correction Power Quality Solutions www.epcos.com Contents Power Quality Solutions Preview PFC capacitor series overview PQS key components overview Important notes PFC capacitors ¼ PhaseCap Premium 230 … 800 V, 5.0 … 33 kvar

1206 22uF 35V

Abstract: bg 22 transistor BCP56CT schottky transistor spice
Contextual Info: SC2450 BI-Phase/Dual Controller POWER MANAGEMENT Description Features The SC2450 can be configured as a dual converter or a bi-phase converter for high current applications. The part is designed for point of use power supplies with 8.5-30V nominal backplane power sources. Multiple supplies can

lc5814

Abstract: LC5800 sanyo lcd 42 LC5812 LC5822 LC5823 LC5824 SO4 DO
Contextual Info: Ordering number : EN5944 CMOS IC LC5824, LC5823, LC5822 4-Bit Single-Chip Microcontrollers Featuring 4 KB to 8 KB of ROM, 1 Kbit of RAM, and an LCD Driver for Medium Speed Small-Scale Control Applications Overview Features The LC5822, LC5823, and LC5824 are CMOS

2N6839

Contextual Info: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX

transistor GT 1083

Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz
Contextual Info: PACKARD MM COM PON EN TS LINEAR POWER TRANSISTOR HXTR-5102 Features 20.3 TYP. 0.80 HIGH P1dB LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz 14.2 (0.b6) TYP. 3-05 TYR ( 0 . 12 ) 2.0 (0.0801 HIGH P1dB GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

LP141X1

Abstract: JAE FI-seb20p-HF13 PHILIPS LP150X1 15 XGA TFT DISPLAY FI-SEB20S transistor a1m R0-R5 LP150X1 BHSR-02VS-1 G768 SN75LVDS84 LV- JST
Contextual Info: SPECIFICATIONS TITLE: LP150X1 LIQUID CRYSTAL DISPLAY LP150X1 REV. 1.0 PAGE 1 OF 20 DATA DISPLAY AG LP150X1 15.0“ XGA TFT LCD PRELIMINARY SPECIFICATION The information given in this document is carefully checked and believed to be reliable. Data Display reserves the