TRANSISTOR AFR Search Results
TRANSISTOR AFR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR AFR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D | |
419B-02
Abstract: NSM11156DW6T1G marking .544 sot363
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NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D 419B-02 marking .544 sot363 | |
Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D | |
N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 | |
419B-02
Abstract: NSM21356DW6T1G SC marking code NPN transistor
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NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor | |
419B-02
Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
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NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21 | |
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
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NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D | |
Contextual Info: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series |
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NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D | |
BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
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BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 | |
NSB1706DMW5T1GContextual Info: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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NSB1706DMW5T1G NSB1706DMW5T1G, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1G | |
Contextual Info: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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NSB1706DMW5T1G, NSVB1706DMW5T1G SC-88A NSB1706DMW5T1/D | |
BFR540
Abstract: MSB003
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BFR540 BFR540 125006/03/pp16 MSB003 | |
BFG35Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35 | |
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic |
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BUD42D D42DG BUD42D/D | |
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369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG | |
Contextual Info: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base |
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NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D | |
BFG198Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a |
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BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 | |
marking 88A
Abstract: marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking
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NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking 88A marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking | |
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
BUJ103AX
Abstract: BP317 BU1706AX
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BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX | |
BP317
Abstract: BU1706AX BUJ204AX
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BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ103A O220AB SCA60 135104/240/02/pp12 | |
BUJ204AContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
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BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A | |
str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
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M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 |