TRANSISTOR AAA Search Results

bf 507 transistor

Contextual Info: bsc d Hi aaastos oqdhsi3 a h is ie g T - 3 I- Z / NPN Silicon RF Transistor SIEMENS AKT I EN GE SE LLS CH A F BF 507 o- °4513 BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF

BFS20R

Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Contextual Info: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed

TRANSISTOR SMD MARKING CODE QR

Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

CSR Bluecore2

Abstract: xcs921 CDRH3D16 CSR Bluetooth CSR Bluetooth Driver CL-54
Contextual Info: December 12, 2003 Ver. S2 XCS921 Series Driver Transistor Built-In Synchronous Step-Down DC/DC Converters for CSR, BC2 Preliminary „ APPLICATIONS z For CSR Bluetooth chip sets BC2 z Bluetooth headset ‹ P channel driver transistor built-in ‹ Synchronous N channel switching transistor built-in

IC 4556

Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Contextual Info: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.

Contextual Info: N AflER PHILIPS/DISCRETE 25E ]> • bbS3T31 aaaQbTS 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK655-500A BUK655-500B BUK655-500C T -3 7 -/ 3 GENERAL d e s c r ip t io n QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

Contextual Info: marktech international 1ÔE D s 7 n b s s aaao47Q b TRANSISTOR COUPLER NT5350 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS I— • • • • • AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHO N E LINE R EC EIV ER

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: P-CHANNEL MOSFET
Contextual Info: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

transistor BD 424

Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202
Contextual Info: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

BD429

Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in

Contextual Info: XC9223/XC9224 Series ETR0509_006 1A Driver Transistor Built-In Step-Down DC/DC Converters ☆GO-Compatible •GENERAL DESCRIPTION The XC9223/XC9224 series are synchronous step-down DC/DC converters with a 0.21Ω TYP. P-channel driver transistor and a synchronous 0.23Ω (TYP.) N-channel switching transistor built-in. A highly efficient and stable current can be supplied up to 1.0A by

1427H

Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427
Contextual Info: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r

d2625

Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
Contextual Info: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2SK1953

Abstract: transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.

CDRH4D28C

Abstract: MSOP-10 USP-10B XC9223 XC9224
Contextual Info: XC9223/XC9224 Series ETR0509_007 1A Driver Transistor Built-In Step-Down DC/DC Converters ☆GreenOperation-Compatible •GENERAL DESCRIPTION The XC9223/XC9224 series are synchronous step-down DC/DC converters with a 0.21Ω TYP. P-channel driver transistor and a

Contextual Info: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY

sot669 footprint

Contextual Info: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY

Contextual Info: TO -92 TB100 NPN power transistor 19 December 2013 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO92 plastic package intended for use in low power SMPS emitter switching circuits.

Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC

1206 PHILIPS

Abstract: transistor 86
Contextual Info: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

2SD2385

Abstract: 2-21F1A 2SB1556
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2385 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q ^o = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO

Contextual Info: FZ 360 R 17 KF Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,035 °CAW RthJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte VcES Maximum rated values 1700 V 360 A RthCK le 0,025 °C/W

Contextual Info: BLF7G27L-135 Power LDMOS transistor Rev. 1 — 1 November 2011 Objective data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance