TRANSISTOR AA A Search Results

2C3440

Contextual Info: NPN Power Transistor Chips 2C3440 r CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 7 Mils Nominal E = Emitter Pad .007 x .0065

Contextual Info: Stanford Microdevices Product Description SNA-600 Stanford Microdevices' SNA-600 is a high-performance G aA s Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

TLP620

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L TLP620, TLP620-2, TLP620-4 DATA G aA s IRED & PH OTO -TRANSISTOR TLP620 PROGRAM M ABLE CONTROLLERS A C / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP620, -2 and -4 consists of a photo-transistor

BUZ64

Abstract: transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 64 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 64 400 V Ia 11.5 A ^DS on 0.4 Í2 Package 1) O rdering Code TO-204 AA C67078-S1017-A2 Maximum Ratings Parameter Symbol Continuous drain current, 7C = 31 “C

Contextual Info: BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3129-A2

Abstract: tp 312 transistor
Contextual Info: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

lc 5013

Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Contextual Info: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal

NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR
Contextual Info: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

2C5091

Abstract: 2C5093 2C5094 2C5096
Contextual Info: bflSblTl ÜDDD'îST 7flT • PPC PNP High Voltage ower Transistor Chips 1 1 ~o\ CHIP TYPE: AA FEATURES • E pitaxial, Planar Design • Base, Em itter M etallization: A lum inum • M etallizatio n T hickn ess: 20,000 \ N o m in al • B a ck s id e C o lle cto r M etallization: G o ld

TLP559

Abstract: E67349
Contextual Info: TO SHIBA TLP559 IGM TOSHIBA PHOTOCOUPLER G a A iA s IRED + PHOTO-IC T L P 5 5 9 ( I G M) Unit in mm TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 (IGM) consists of a G aA M s high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

high sensitivity reflective phototransistor

Abstract: ON2152 Reflective photosensor response time
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2152 Reflective Photosensor • Outline O N 2152 is a p h o to se n so r detecting the change o f re fle ctiv e light in w hich a high efficiency G aA s infrared light em itting diode is used as the light em itting elem ent, and a high sensitivity Si photo transistor

BUP101

Abstract: bup transistor A 671 transistor
Contextual Info: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2

2SC1845 equivalent

Abstract: sb 0201-a 2SC1845 2sC1845 NPN 2SC1845E 2sc1845 transistor OMA 221 2SA992 X541 S400
Contextual Info: NEC m *=riXTH Aa Silicon T ra n s is to r 2SC1845 N P N i fcf ^ 41v 'T ^ U J i^ v ' y =1 > Y =7 > i> 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier O ,14 W i 7, - f U t co ZJ > }. n — ;i, 7 > r > m ‘x & j: o p iiiW E , i t 'K & m ,

Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and

SC70-6 SSOT6

Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and

Contextual Info: DATA SHEET M Ff / PHOTOCOUPLER / PS2562-1 ,-2, PS2562L-1,-2 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T h e P S 2 5 6 2 -1 , -2 and P S 2 5 6 2 L -1 , -2 are o p tically cou ple d iso la to rs con tain ing a G aA s light em ittin g diode and an

Contextual Info: T O SH IB A TLP582 TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO IC TLP582 MOS FET GATE DRIVER U n it in mm TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a G aA €A s lig h t em itting diode and integrated high gain, high speed photodetector. The detector has a totem pole output circu it th at provides source

O25P

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2702-1,PS2702-2, PS2702-4 HIGH ISOLATION VOLTAGE DARLINTON TRANSISTOR NEPOC SOP MULTI PHOTOCOUPLER Series DESCRIPTION T h e P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d iso la to rs con tain ing a G aA s light em itting d iod e and an

NEC diode ie3

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2506-1 ,-2,-4, PS2506L-1 ,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION T h e P S 2 5 0 6 -1 , -2, -4 and P S 2 5 0 6 L -1 , -2, -4 are o p tica lly cou pled iso la to rs co n tain ing a G aA s light em ittin g diode

2502L1

Abstract: NEC PS2502
Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2502-1 ,-2,-4, PS2502L-1 ,-2,-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION T h e P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are o p tica lly cou pled iso la to rs co n tain ing a G aA s light em ittin g diode

vqe 13

Abstract: APT35G60BN APT35G50BN APT35G60
Contextual Info: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

Contextual Info: DATA SHEET \ I F f * / / PHOTOCOUPLER P S 2 5 6 1 - 1 ,- 2 , P S 2 5 6 1 L -1 ,- 2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T he PS2561 -1, -2 and PS2561 L -1 , -2 are o p tica lly co u p le d iso lato rs c o n ta in in g a G aA s light em ittin g d io d e and an