TRANSISTOR AA A Search Results

Contextual Info: TOSHIBA TLP759 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G aA M s IRED + PHOTO-IC TLP759 LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP759 consists of a GaA€As high-output light

2C3440

Contextual Info: NPN Power Transistor Chips 2C3440 r CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 7 Mils Nominal E = Emitter Pad .007 x .0065

Contextual Info: Stanford Microdevices Product Description SNA-600 Stanford Microdevices' SNA-600 is a high-performance G aA s Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor­ mance to 6.5 GHz. DC-6.5 GHz, Cascadable

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

Contextual Info: GaAÔAs IRED a PHOTO-IC TLP759 TLP7 59 DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER. M ICROPROCESSOR SYSTEM INTERFACES. SWITCHING POW ER SUPPLY FEEDBACK CONTROL. TRANSISTOR INVERTOR. The TO SHIBA TLP759 consists of a G aA fA s high-output light em itting

TLP620

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L TLP620, TLP620-2, TLP620-4 DATA G aA s IRED & PH OTO -TRANSISTOR TLP620 PROGRAM M ABLE CONTROLLERS A C / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP620, -2 and -4 consists of a photo-transistor

YTFP453

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR YTFP453 SILICON N CHANNEL MOS TYPE jr-M O S n HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR Unit in aa 1&9MAX. DRIVE APPLICATIONS. 0 3 .2 ± a s ¿ & Æ FEATURES:

Contextual Info: SIEMENS BUZ 64 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos /D ^DS on Package 1) Ordering Code BUZ 64 400 V 11.5 A 0.4 £2 TO-204 AA C67078-S1017-A2 Maximum Ratings Symbol Parameter Continuous drain current, Tc = 31 °C

TLP582

Contextual Info: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP582 DATA G aA íA s IRED & PHOTO 1C TLP582 MOS FET GATE DRIVER TRANSISTOR INVERTER The T O S H IB A TLP582 consists of a GaA-fAs lig h t em itting diode and integrated high gain, high speed photodetector.

IR receiver didoe

Abstract: E67349 TLP114A 11-4C2
Contextual Info: TLP114A TO SH IBA TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC T L P114A Unit in mm DIGITAL LOGIC ISOLATION. LINE RECEIVER. 6 POWER SUPPLY CONTROL FEEDBACK CONTROL. 5 4 i l i SWITCHING POWER SUPPLY. TRANSISTOR INVERTOR. o The TOSHIBA MINI FLAT COUPLER TLP114A is a small outline

C67078-S3112-A2

Abstract: J 326 t 326 Transistor
Contextual Info: BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 357 1000 V 5.1 A 2Ω TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current

2C3439

Contextual Info: NPN Power Transistor Chips 2C3439 FEATURES CHIP TYPE: AA • Triple Diffused, Planar Design • C ontact M etallization: Base, E m itter - A lum inum - 20,000 A N om inal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 7 M ils N om inal E = Emitter Pad .007 x .0065

C67078-S3128-A2

Abstract: buz341
Contextual Info: BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3129-A2

Abstract: tp 312 transistor
Contextual Info: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

DIODE 349

Abstract: C67078-S3113-A2
Contextual Info: BUZ 349 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 Ω TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3130-A2

Contextual Info: BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 334 600 V 12 A 0.5 Ω TO-218 AA C67078-S3130-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3109-A2

Abstract: 80J-10
Contextual Info: BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 308 800 V 2.6 A 4Ω TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: T O SH IB A TLP559 TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION G a A M s IRED & PHOTO IC LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The T O S H IB A TLP559 consists of a G aA€A s high-output lig h t

lc 5013

Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Contextual Info: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal

zth 347

Abstract: BUZ347
Contextual Info: BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 347 50 V 45 A 0.03 Ω TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

tlp250 application note

Abstract: TLP250 TLP250 application Inverter TLP250
Contextual Info: TO SHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL T L P 2 50 DATA G aA íA s IRED & PHOTO-IC TLP250 TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE PO W ER MOS FET GATE DRIVE U n it in mm The Toshiba TLP250 consists of a G a A iA s lig h t em itting diode and