TRANSISTOR A94 Search Results

Contextual Info: A94 YOUDA TRANSISTOR Si PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: A94 YOUDA TRANSISTOR SI PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323

a940 Transistor

Abstract: c2073 transistor TRANSISTOR c2073 C2073 transistor a940 A940 A940 C2073 C2073 2 c2073 transistor npn c2073 silicon npn transistor
Contextual Info: C2073 NPN Epitaxial Silicon Transistor TO-220 TV VERTICAL DEFLECTION OUTPUT Complement to A940 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC max =25W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage

BR a94

Abstract: A94 TRANSISTOR A94 TRANSISTOR PNP transistor br a94 transistor A94 PNP 400V
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A94 SOT-89-3L TRANSISTOR PNP FEATURES High voltage 1 2 3 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Unit VCBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A94 SOT-89-3L TRANSISTOR PNP FEATURES High voltage 1 2 3 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Units VCBO

transistor br A94

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 1. EMITTER -0.2 A 2. BASE Collector-base voltage V(BR)CBO: -400

BR a94

Abstract: IC 555 datasheet of ic 555 A94 TRANSISTOR datasheet ic 555
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR（ PNP ） FEATURES TO—92 Power dissipation PCM: 0.625 W （Tamb=25℃） Collector current ICM: 1.EMITTER -0.2 A 2.BASE Collector-base voltage V BR CBO :

Contextual Info: A94 -0.2A , -400V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE Excellent hFE Linearity CLASSIFICATION OF hFE 1 Product-Rank A94-A A94-B1 A94-B2 A94-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A94 TRANSISTOR PNP 1. BASE FEATURES  Low Collector-Emitter Saturation Voltage  High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 1. EMITTER -0.2 A 2. BASE Collector-base voltage V(BR)CBO: -400 V 3. COLLECTOR Operating and storage junction temperature range

BR a94

Abstract: transistor A94 transistor br A94 A94 TRANSISTOR PNP
Contextual Info: A94 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.2 A Collector-base voltage V (BR)CBO :-400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

transistor A94

Abstract: transistor br A94 BR a94 A94 TRANSISTOR PNP "a94"
Contextual Info: m TO-92 Plastic-Encapsulate Transistors cc ^ A94 TRANSISTOR PNP FEATURES P cm: 0.625W (Tamb=25°C) Ic m : -0.2 A voltage V(BR)CBO: - 4 0 0 V junction temperature range Tj.Tstg: -55°C to + 150“C ELECTRICAL CHARACTERISTICS (Tamb=25°C u n l e s s o t h e r w is e

A940A

Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

A940A

Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

A940A

Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

A94 TRANSISTOR

Abstract: BCPA94 BCPA44 A94B transistor A94 br a94 transistor br A94
Contextual Info: BCPA94 -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES 

transistor a949

Abstract: A949 a949 transistor A949 Y 2SA949
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)

transistor a949

Abstract: A949 2SA949 A949 Y a949 transistor
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)

transistor a949

Abstract: A949 2SA949
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 4.0 pF typ. • High transition frequency: fT = 120 MHz (typ.)

transistor a949

Abstract: A949 2SA949 a949 transistor TOSHIBA a949
Contextual Info: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)

BR a94

Abstract: transistor SOT23 4d transistor A94 A94 TRANSISTOR A94 TRANSISTOR PNP MMBTA94
Contextual Info: MMBTA94 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -400 -450 -6.0