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    TRANSISTOR A1891 Search Results

    TRANSISTOR A1891 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR A1891 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		2SA1891 2SC5028 PDF

    A1891

    Abstract: transistor A1891
    Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		2SA1891 2SC5028 A1891 transistor A1891 PDF

    A1891

    Abstract: transistor A1891 2SA1891 2SC5028
    Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		2SA1891 2SC5028 A1891 transistor A1891 2SA1891 2SC5028 PDF

    A1891

    Abstract: 2SA1891 2SC5028
    Contextual Info: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


    Original     		2SA1891 2SC5028 A1891 2SA1891 2SC5028 PDF