TRANSISTOR A12 Search Results

1348 transistor

Abstract: MPS-A12
Contextual Info: Silicon 21 Darlington Transistor M P S-A 12 The General Electric MPS-A12 is a Silicon Planar Epitaxial Passivated NPN Darlington Transistor is designed for preamp­ lifier input applications where high impedance is a requirement. SYMBOL Collector to Emitter

sd1441

Abstract: SD-1441
Contextual Info: SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG A C FEATURES: 1 3 2x Ø N FULL R • 175 MHz 12.5 V

2SC2782

Abstract: NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

IC 4047

Abstract: A1210 BTA1210E3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656E3 Issued Date : 2004.06.03 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

A1210

Abstract: BTA1210FP
Contextual Info: CYStech Electronics Corp. Spec. No. : C656FP Issued Date : 2005.03.29 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

A1210

Abstract: BTA1210J3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210J3 Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

A1210

Abstract: BTA1210T3
Contextual Info: CYStech Electronics Corp. Spec. No. : C656T3 Issued Date : 2004.09.01 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application.

10 micro farad capacitor

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs

transistor PNP A124

Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001
Contextual Info: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124

transistor BF 258

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

TRANSISTOR S1d

Abstract: AX 1101
Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type

TRANSISTOR S2d

Abstract: NPN S2D
Contextual Info: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

D2641

Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

0482 transistor

Abstract: MPS-A12
Contextual Info: MPS-A12 SILICON NPN SILICON DARLINGTON TRANSISTOR . . . d e sig n e d fo r p r e a m p lifie r NPN SILICON DARLINGTON TRANSISTOR in p u t a p p lic a t io n s r e q u ir in g in p u t im p e d a n c e o f se ve ral m e g o h m s . • E x c e lle n t C u r r e n t - G a in L in e a r it y f r o m 1.0 m A t o 1 0 0 m A

a1270* transistor

Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

Contextual Info: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)

Contextual Info: MCH6123 Ordering number : ENA1291 SANYO Semiconductors DATA SHEET MCH6123 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers. Features • • • • •

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

K1S161615M

Contextual Info: K1S161615M UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target August 21, 2002 Preliminary 0.1 Revised - Deleted Technical Note. - Added package dimension.

2sa1225

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

K1S321611C

Abstract: K1S321611C-I
Contextual Info: Preliminary K1S321611C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Deleted 60ns Speed Bin June 13, 2003 Preliminary 0.2