TRANSISTOR A12 Search Results

K1S161611A

Abstract: K1S161611A-I
Contextual Info: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary

Contextual Info: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)

Contextual Info: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and

Contextual Info: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional

K1S1616B5M-E

Contextual Info: Advance K1S1616B5M UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft - Design target Draft Date Remark May 30, 2002 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S1616BCA

Abstract: K1S1616BCA-I
Contextual Info: Preliminary K1S1616BCA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: Preliminary K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

r1lv0416c

Abstract: R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I
Contextual Info: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0001 Preliminary Rev.0.01 Jan.11.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor

Contextual Info: HM6216255H Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-763D (Z) Rev. 1.0 Sept. 15, 1998 Description The H M 6216255H Series is a 4-M bit high speed static RAM organized 256-k w ord x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

transistor WT4

Abstract: WT4 Transistor S5R5 TR4943 LC66P516 a1w* transistor P-5W 303A capacitor
Contextual Info: O rdering num ber: EN3114A CMOS LSI LC66P516 No. 3114A 4-bit Microcontroller with Built-in PROM /• / OVERVIEW PINOUTS ■/ .*• The LC66P516 is a 4-bit microcontroller with a built-in 16 Kbyte PROM. It is compatible with the LC665XX series mask ROM devices, making it ideal for prototyp­

a1227

Abstract: transistor a1227 lt4060 A1225LUA-T
Contextual Info: A1225, A1227, and A1229 Hall Effect Latch for High Temperature Operation Features and Benefits Description ▪ Symmetrical switchpoints ▪ Superior temperature stability ▪ Operation from unregulated supply ▪ Open-drain 25 mA output ▪ Reverse Battery protection

PBX32A-D40

Abstract: making voltmeter PEEL programming 32310 cap 104 a26 transistor cap103
Contextual Info: Gnd +Vin 123 Gnd restarting your program. Removing the PropSTICK from a solderless breadboard is a little tricky. Be sure to use the "extractor" provided and not a metal implement like a screwdriver. Working from the sides, as shown in the photo below, gently pry a little bit at a time on alternate

TC5816AFT

Abstract: tc5816ft TC5816 toshiba NAND ID code TSOP44-P-400B nv16 NAND memory nand toshiba reference
Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816AFT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register which allows

MPSA12

Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
Contextual Info: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg

Contextual Info: MAPC-104 PC/104-Plus Series www.murata-ps.com Non-Isolated, DC/DC Converters 3.3, 5.1 & 12.4, 46W Mobile Applications FEATURES „ 46 Watts for Mobile Access Router to IP/Networks „ PC/104-Plus compatible/stackable, powering Cisco system cards „ 9 to 32V input range, supporting both

tlp508

Abstract: JIS-C-5020 JIS C7021 B10 TLP645 JIS-C-5003 JISC5700 TLP573 TLP546G SCR 7704
Contextual Info: 9. Reliability 9.1 General In recent years, as the application fields for photo couplers expand, more discussions are being made on reliability. For reliability improvement, it is insufficient to perform strinct process management and to have reliability tests such as life test and environmental tests. It is necessary to

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: Features ● ● ● ● ● ● ● ● ● ● ● Non-Isolated Synchronous rectification design Adjustable Output voltage 2, 3, 4AMP Adjustable Positive Step Down Integrated Switching Regulator Over load protection 125% full load typical Remote ON/OFF Control(Ground Off)

lvcz161284a

Abstract: A115-A C101 SN74LVCZ161284A
Contextual Info: SN74LVCZ161284A 19-BIT IEEE 1284 TRANSLATION TRANSCEIVER WITH ERROR-FREE POWER UP SCES358B – SEPTEMBER 2001 – REVISED SEPTEMBER 2002 D D D D D D D D Power-On Reset POR Prevents Printer Errors When Printer Is Turned On, But No Valid Signal Is at Pins A9–A13

LVC161284

Contextual Info: SN74LVC161284 19ĆBIT BUS INTERFACE SCAS583J − NOVEMBER 1996 − REVISED FEBRUARY 2005 D 1.4-kΩ Pullup Resistors Integrated on All D D D D Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V