TRANSISTOR A114 E Search Results
TRANSISTOR A114 E Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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TRANSISTOR A114 E Datasheets Context Search
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transistor A114
Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
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2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 | |
A114
Abstract: A115 FPD4000V JESD22
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FPD4000V FPD4000V A114 A115 JESD22 | |
Transistor p1f
Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
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FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are |
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MRF6V2010N MRF6V2010NB | |
MRF6V2300N
Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
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MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22 | |
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Contextual Info: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to |
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NCP120 150mA, NCP120 711AT NCP120/D | |
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Contextual Info: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous |
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AFT26P100â | |
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Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous |
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AFT26P100â | |
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Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T1G4004532-FS T1G4004532-FS TQGaN25 | |
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Contextual Info: NCP133 500 mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP133 is a 500 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to |
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NCP133 NCP133 NCP133/D | |
atc100B102J
Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101
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MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 atc100B102J atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N A113 A114 A115 C101 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. |
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MRF6P24190H MRF6P24190HR6 | |
523AN
Abstract: PCA9306 PCA9306DTR2G UDFN-8 PCA9306USG
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PCA9306 948AL 523AN PCA9306/D PCA9306DTR2G UDFN-8 PCA9306USG | |
pca9306 Application NoteContextual Info: PCA9306 Dual Bidirectional I2C-bus and SMBus Voltage-Level Translator The PCA9306 is a dual bidirectional I2C−bus and SMBus voltage−level translator with an enable EN input. http://onsemi.com Features MARKING DIAGRAMS • 2−bit Bidirectional Translator for SDA and SCL Lines in |
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PCA9306 PCA9306 PCA9306/D pca9306 Application Note | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. |
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MRF5P21240HR6 MRF5P21240HR6 | |
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Contextual Info: NL37WZ17 Triple Noninverting Schmitt-Trigger Buffer The NL37WZ17 is a high performance buffer with Schmitt–Trigger inputs operating from a 2.3 to 5.5 V supply. The NL37WZ17 can be used as a line receiver which will receive slow input signals. The NL37WZ17 is capable of transforming slowly |
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NL37WZ17 NL37WZ17 NL37WZ17US | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of |
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MRF6P9220H MRF6P9220HR3 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with |
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MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 | |
mosfet j172
Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
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MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X | |
ATC100B101JT500XT
Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
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MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 | |
MOSFET marking Z4Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. |
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MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4 | |
NIPPON CAPACITORSContextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion |
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MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS | |
k 2645 MOSFET
Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
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MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 | |
pwm sinewave timing
Abstract: A114 A115 C3216X5R0J106M JESD22 JESD78 NCP1500 NCP1500DMR2 RLF5018T MSOP-8 PFM light load
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NCP1500 NCP1500 r14525 NCP1500/D pwm sinewave timing A114 A115 C3216X5R0J106M JESD22 JESD78 NCP1500DMR2 RLF5018T MSOP-8 PFM light load | |