TRANSISTOR A114 E Search Results

Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor A114

Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

A114

Abstract: A115 FPD4000V JESD22
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V

transistor a114 diagram

Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

transistor A114

Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

marking codes transistors a1 sot-23

Abstract: A114 MAX8863 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23
Contextual Info: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.

MRF6V2300N

Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

hatching machine

Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

transistor SMD P1f

Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications

Contextual Info: NCP130 300mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP130 is a 300 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to

Contextual Info: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to

Contextual Info: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: NCS2300 Headset Detection Interface The NCS2300 is a compact and cost effective headset detection interface IC. It integrates a comparator, OR gate, and N−channel MOSFET to detect the presence of a stereo headset with a microphone. Pull−up resistors for the detection pins are internalized.

Contextual Info: NCS2300 Headset Detection Interface The NCS2300 is a compact and cost effective headset detection interface IC. It integrates a comparator, OR gate, and N−channel MOSFET to detect the presence of a stereo headset with a microphone. Pull−up resistors for the detection pins are internalized.

Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

uDFN-6

Abstract: NCP693DMN33TCG NCP693HMN12TCG A114 NCP693 NCP693DMN08TCG NCP693HMN08TCG NCP693HMN10TCG NCP693HMN25TCG NCP693HMN33TCG
Contextual Info: NCP693 1A CMOS Low-Dropout Voltage Regulator The NCP693 series of fixed output low dropout linear regulators are designed for portable battery powered applications with high output current requirement up to 1 A. Each device contains a voltage reference unit, an error amplifier, a PMOS power transistor, resistors

Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and

Contextual Info: NCP133 500 mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP133 is a 500 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to