TRANSISTOR A114 E Search Results

39SF512

Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
Contextual Info: SST Product Reliability SST Product Reliability INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with the

Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor A114

Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Contextual Info: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .

transistor a114 esd

Abstract: TRANSISTOR A114 A114 transistor 2n7002k
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor A114

Abstract: 2n7002k transistor a114 esd
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

transistor 4242 dm

Abstract: MBRM130L NCP1800 NCP1800DM41R2 NCP1800DM41R2G NCP1800DM42R2 NTGS3441T1 NTHD4P02FT1 cccv regulator
Contextual Info: NCP1800 Single−Cell Lithium Ion Battery Charge Controller The NCP1800 is a constant current, constant voltage CCCV lithium ion battery charge controller. The external sense resistor sets the full charging current, and the termination current is 10% of the

transistor A114

Abstract: A114 A115 FPD1000V JESD22 A114 transistor
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

A114

Abstract: A115 FPD4000V JESD22
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V

A114

Abstract: A115 FPD2000V JESD22 Au Sn eutectic
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V

transistor A114

Abstract: transistor a114 diagram A114 transistor transistor a115
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 33 dBm Linear Output Power ♦ 14.5 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 44 dBm Output IP3 ♦ 20 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD2000V

transistor a114 diagram

Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
Contextual Info: PRELIMINARY • FEATURES 1.8 GHz ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias 1W POWER PHEMT

transistor A114

Abstract: a114 transistor transistor a114 esd 2N7002KW
Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

UM3750

Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic
Contextual Info: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

transistor pnp a111

Abstract: transistor A114 coolant yushiroken YUSHIROKEN TRANSISTOR A117 EC50T-3 photoelectric sensor circuit diagram transistor a115 YUSHIROKEN coolant A114 pnp
Contextual Info: F502-EN2-04.book Seite 111 Dienstag, 26. Juli 2005 5:48 17 Distance setting photoelectric sensor in metal housing E3S-CL E3S-CL • High water, oil and detergent resistance • Minimal black/white error for highest reliability detecting different colored objects E3S-CL1

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

transistor A114

Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

Mj2955 power transistor using regulator

Abstract: 78XXT isc MJ2955 transistor MC34072V MJ2955 chip NCP7805 A114 pnp A114 A115 JESD78
Contextual Info: NCP7800 1.0 A Positive Voltage Regulators The NCP7800 series consists of 3 pin, fixed output, positive linear voltage regulators, suitable for a wide variety of applications. These regulators are extremely rugged, incorporating internal current limiting, thermal shutdown and safe-area compensation. With

marking codes transistors a1 sot-23

Abstract: G1 SOT-23 MAX8863TEUK A114 MAX8863 MAX8863REUK MAX8863SEUK SOT-23 MOSFET P-CHANNEL a1 1- mark 5pin mosfet mark G4
Contextual Info: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.

transistor A106

Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Contextual Info: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A

marking codes transistors a1 sot-23

Abstract: A114 MAX8863 MAX8863REUK MAX8863SEUK MAX8863TEUK G1 SOT-23
Contextual Info: MAX8863 Pin-Compatible, Low-Dropout, 120 mA Linear Regulator Delivering up to 120 mA, the MAX8863 is a fixed output, low–dropout linear regulator that operates from a +2.5 V to +6.0 V input range. The 50 µA supply current remains independent of load, making these devices ideal for battery–operated portable equipment.

Contextual Info: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for