TRANSISTOR A114 E Search Results

transistor A114

Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

A114

Abstract: A115 FPD4000V JESD22
Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V

Contextual Info: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are

Contextual Info: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to

Contextual Info: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

atc100B102J

Abstract: atc100b102jt50x ATC200B393KT50XT ATC200B223KT50XT MRF6V2010N MRF6V2010NR1 A113 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

Transistor J550

Abstract: j584 transistor
Contextual Info: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: NL37WZ17 Triple Noninverting Schmitt-Trigger Buffer The NL37WZ17 is a high performance buffer with Schmitt–Trigger inputs operating from a 2.3 to 5.5 V supply. The NL37WZ17 can be used as a line receiver which will receive slow input signals. The NL37WZ17 is capable of transforming slowly

ATC100B101JT500XT

Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with

MOSFET marking Z4

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion

resistor bank

Abstract: A114 A115 C3216X5R0J106M JESD22 JESD78 NCP1500 NCP1500DMR2 RLF5018T MSOP-8 PFM light load
Contextual Info: NCP1500 Dual Mode PWM/Linear BUCK Converter The NCP1500 is a dual mode converter that operates as either a pulse width modulated PWM buck converter or as a linear regulator. The converter automatically transitions between the two modes. The converter operates as a PWM when a synchronization signal is present

V3063

Abstract: Q100-002 NCP3063B NCV3063 MC34063a driver led MC34063a driver led step-up MC33063a driver led NCP3063 4N7 CAPACITOR mc34063a led driver
Contextual Info: NCP3063, NCP3063B, NCV3063 1.5 A, Step-Up/Down/ Inverting Switching Regulators The NCP3063 Series is a higher frequency upgrade to the popular MC34063A and MC33063A monolithic DC−DC converters. These devices consist of an internal temperature compensated reference,

diode a4W

Abstract: TRANSISTOR a4w H7CX AW N a4w Diode Counter Omron H7CX a4w 43 a4w transistor P2CF-11 Y92F-30 Y92S-29
Contextual Info: Multifunction Preset Counter • Highly visible display with backlit negative trans- missive LCD. ■ Programmable PV color to visually alert when out- put status changes screw terminal block models . ■ Intuitive setting enabled using ergonomic up/down

MW6S010NR1

Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier

Contextual Info: NCP59744 3.0 A, Dual-Rail Very Low-Dropout Linear Regulator with Programmable Soft-Start http://onsemi.com The NCP59744 is dual−rail very low dropout voltage regulator that is capable of providing an output current in excess of 3.0 A with a dropout voltage of 115 mV typ. at full load current. The devices are

PWM 003

Abstract: pwm sinewave timing A114 A115 JESD22 JESD78 NCP1500 NCP1500DMR2 NCP1500DMR2G MSOP-8 PFM light load
Contextual Info: NCP1500 Dual Mode PWM/Linear BUCK Converter The NCP1500 is a dual mode converter that operates as either a pulse width modulated PWM buck converter or as a linear regulator. The converter automatically transitions between the two modes. The converter operates as a PWM when a synchronization signal is present

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: MRF6P21190HR6 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB