TRANSISTOR A106 Search Results
TRANSISTOR A106 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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TRANSISTOR A106 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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2sb504kpl 30092sb502bly34+6 | |
transistor marking LN4Contextual Info: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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2sc5227aena1063a1063-6/6transistor marking ln4 | |
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Contextual Info: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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ena1063a2sc5227as21e2013a-009+1 | |
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Contextual Info: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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2sc5227aena1063aa1063-8/8 | |
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Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz). |
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ena10612sc5501as21e2500mw+2 | |
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Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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2sc5226aena1062a1062-6/6 | |
transistor marking LN4
Abstract: MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor
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2sc5226aena1062s21e2a1062-6/6+8 | |
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Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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2sc5226aena1062aa1062-8/8 | |
transistor zo 607
Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
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2sc5501aena1061s21e2500mw+8 | |
transistor marking LN4
Abstract: transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633
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2sc5227aena1063s21e2a1063-6/6+9 | |
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Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz). |
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2sc5501aena1061500mwa1061-5/5 | |
SC 708-4
Abstract: 2SC5226A A1062 marking 624 sot-323
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ena1062a2sc5226as21e2023a-009+4 | |
SC-82AB sot-343
Abstract: ic not 4069 2SC5501A SC82AB sot-343
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ena1061a2sc5501as21e2500mw+5 | |
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7039a
Abstract: transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3
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ec3h02baena1064bs21e21006size+7 | |
3308 TOP MARK ICContextual Info: EC3H02BA Ordering number : ENA1064 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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ena1064ec3h02bas21e21006size+2 | |
transistor zo 607
Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
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ec3h02baena1064as21e21006size+11 | |
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Contextual Info: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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ena1064bec3h02bas21e21006size+1 | |
7039aContextual Info: EC3H03BA Ordering number : ENA1068 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H03BA VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features • • • • • Low noise : NF=1.1dB typ f=1GHz . High gain :⏐S21e⏐2=12dB typ (f=1GHz). |
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ec3h03baena1068s21e2ul94hb+2 | |
7039a
Abstract: a1069
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ec3h07baena106910ghzs21e2+4 | |
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Contextual Info: Ordering number : ENA1061A 2SC5501A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW max |
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ena1061a2sc5501a500mw250mm2+1 | |
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Contextual Info: Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C |
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ena1063a2sc5227as21e2a1063-8/8 | |
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Contextual Info: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C |
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ena1062a2sc5226as21e2a1062-8/8 | |
CPM2C
Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
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rs-232c/peripheralr301-e3-01cpm2ccpm2c-24edt+8 | |