TRANSISTOR A106 Search Results
TRANSISTOR A106 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRT155R61A106ME13D | Murata Manufacturing Co Ltd | 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% | |||
GRT155R61A106ME13J | Murata Manufacturing Co Ltd | 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% | |||
2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet |
TRANSISTOR A106 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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transistor marking LN4Contextual Info: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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2SC5227A ENA1063 A1063-6/6 transistor marking LN4 | |
Contextual Info: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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ENA1063A 2SC5227A S21e2 013A-009 A1063-8/8 | |
Contextual Info: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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2SC5227A ENA1063A A1063-8/8 | |
Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz). |
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ENA1061 2SC5501A S21e2 500mW 250mm20 A1061-5/5 | |
Contextual Info: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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2SC5226A ENA1062 A1062-6/6 | |
transistor marking LN4
Abstract: MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor
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2SC5226A ENA1062 S21e2 A1062-6/6 transistor marking LN4 MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor | |
Contextual Info: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) |
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2SC5226A ENA1062A A1062-8/8 | |
transistor zo 607
Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
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2SC5501A ENA1061 S21e2 500mW A1061-5/5 transistor zo 607 MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572 | |
transistor marking LN4
Abstract: transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633
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2SC5227A ENA1063 S21e2 A1063-6/6 transistor marking LN4 transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633 | |
Contextual Info: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz). |
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2SC5501A ENA1061 500mW A1061-5/5 | |
SC 708-4
Abstract: 2SC5226A A1062 marking 624 sot-323
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ENA1062A 2SC5226A S21e2 023A-009 A1062-8/8 SC 708-4 2SC5226A A1062 marking 624 sot-323 | |
SC-82AB sot-343
Abstract: ic not 4069 2SC5501A SC82AB sot-343
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ENA1061A 2SC5501A S21e2 500mW 250mm2 A1061-8/8 SC-82AB sot-343 ic not 4069 2SC5501A SC82AB sot-343 | |
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7039a
Abstract: transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3
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EC3H02BA ENA1064B S21e2 1006size) A1064-5/5 7039a transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3 | |
3308 TOP MARK ICContextual Info: EC3H02BA Ordering number : ENA1064 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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ENA1064 EC3H02BA S21e2 1006size) A1064-5/5 3308 TOP MARK IC | |
transistor zo 607
Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
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EC3H02BA ENA1064A S21e2 1006size) A1064-5/5 transistor zo 607 ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109 | |
Contextual Info: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz). |
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ENA1064B EC3H02BA S21e2 1006size) A1064-5/5 | |
7039aContextual Info: EC3H03BA Ordering number : ENA1068 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H03BA VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features • • • • • Low noise : NF=1.1dB typ f=1GHz . High gain :⏐S21e⏐2=12dB typ (f=1GHz). |
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EC3H03BA ENA1068 S21e2 UL94HB) A1068-5/5 7039a | |
7039a
Abstract: a1069
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EC3H07BA ENA1069 10GHz S21e2 UL94HB) A1069-7/7 7039a a1069 | |
Contextual Info: Ordering number : ENA1061A 2SC5501A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW max |
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ENA1061A 2SC5501A 500mW 250mm2Ã A1061-8/8 | |
Contextual Info: Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA1063A 2SC5227A S21e2 A1063-8/8 | |
Contextual Info: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA1062A 2SC5226A S21e2 A1062-8/8 | |
CPM2C
Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
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RS-232C/Peripheral R301-E3-01 CPM2C CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110 |