TRANSISTOR A102 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

pnp transistor a1020

Abstract: A1020 transistor A1020 transistor A1020 C2328 a1020 pnp TRANSISTOR C2328 a1020 pnp transistor c2328 transistor a1020 datasheet
Contextual Info: A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to C2328 Chip Appearance Chip Size 760umx760um

c2328

Abstract: TRANSISTOR C2328 c2328 transistor a1020 transistor A1020 transistor a1020 a1020 NPN Transistor a1020 datasheet C2328 DATASHEET
Contextual Info: C2328 C2328 Silicon NPN Epitaxial Transistor Description: The C2328 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to A1020 Chip Appearance Chip Size 760umx760um

SMA1021

Abstract: A1021 CA1021 transistor A1021
Contextual Info: A1021 / SMA1021 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design

Contextual Info: Cascadable Amplifier 10 to 1000 MHz A1021/ SMA1021 V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design

Contextual Info: A1021 / SMA1021 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design

pnp transistor a1020

Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)

pnp transistor a1020

Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

pnp transistor a1020

Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

pnp transistor a1020

Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW

vn10K

Abstract: VN10KN
Contextual Info: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

DSFP-VN0104

Contextual Info: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0106

Contextual Info: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN2406L-G

Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN2450N8-G

Abstract: vn4ew
Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with

Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

MARKING VN

Abstract: vn0606
Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: TN1504 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

mos fet marking k1

Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate