TRANSISTOR A09 Search Results

mpsa09

Abstract: MPS-A09 transistor D 982
Contextual Info: MPS-A09 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for preamplifier applications in audio amplifiers. • Collector-Emitter Breakdown Voltage — B V c E O ” 50 v dc (Min) @ lc = 1.0 m Adc • Low Noise Figure —

2sc 103 transistor

Abstract: transistor BD 430
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in

BD429

Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in

MPSU57

Abstract: MPS-U07 MPS-U57 MPSU57 motorola transistor a 953 037s transistor dm 506 724 motorola NPN Transistor
Contextual Info: MOTOROL A SC XSTRS/R F 1EE D | fc.3t?aSM OGflSSOT a | T - Î 3- I 7 MOTOROLA SEMICONDUCTOR MPS-U57 TECHNICAL DATA AMPLIFIER TRANSISTOR PNP SILICON ANNULAR AMPLIFIER TRANSISTOR * PNP SILICON . . . designed for general-purpose, high-voltage amplifier and driver

BFS20R

Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Contextual Info: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed

Contextual Info: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .

Contextual Info: ALLEGRO MICROSYSTEMS INC TS » 0 S 0 4 3 3 Ô 0 0 0 3 7 4 '} 4 • A L GR T -9 1 -0 1 P R O C E S S YJA Process YJA PNP Power Darlington Transistor Process Y JA is an epitaxial planar P N P silicon Darlington transistor. It is designed for use in highgain, high-power applications. It is the P N P comple­

CPH3249A

Contextual Info: CPH3249A Ordering number : ENA0902 SANYO Semiconductors DATA SHEET CPH3249A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.

CPH3249

Contextual Info: CPH3249 Ordering number : ENA0920 SANYO Semiconductors DATA SHEET CPH3249 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. Ultrahigh-speed switching. Wide ASO. Adoption of MBIT process.

2SC6083A

Abstract: RL-400
Contextual Info: 2SC6083A Ordering number : ENA0900 SANYO Semiconductors DATA SHEET 2SC6083A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.

2SC608

Abstract: 2SC6083A
Contextual Info: 2SC6083A Ordering number : ENA0900A SANYO Semiconductors DATA SHEET 2SC6083A NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.

sot 23 x 316

Abstract: fet sot-89 marking code P-Channel FET 100v to92
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

2SC6089

Abstract: SANYO 2SC6089 IT13093 A0995
Contextual Info: 2SC6089 Ordering number : ENA0995 SANYO Semiconductors DATA SHEET 2SC6089 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.

Contextual Info: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

2sc6091

Contextual Info: 2SC6091 Ordering number : ENA0994 SANYO Semiconductors DATA SHEET 2SC6091 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.

2SC6090

Abstract: 2SC6090LS ENA0996 2SC609 IT03005
Contextual Info: 2SC6090LS Ordering number : ENA0996 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6090LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process.

Contextual Info: VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► The Supertex VN2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

dn5s

Abstract: marking code sot-89 AA
Contextual Info: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

transistor vn2222

Contextual Info: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2222LL is an enhancement-mode normally-off transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate

A090-1

Abstract: 2SC6117 A0901-1
Contextual Info: 2SC6117 Ordering number : ENA0901 SANYO Semiconductors DATA SHEET 2SC6117 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

A09 RF Amplifier

Abstract: A09 amplifier A09 SOT23 4 npn transistor ic RF POWER TRANSISTOR NPN TSA1036CX TSC2411 TSC2411CX
Contextual Info: TSC2411 General Purpose NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCEO 40V BVCBO 75V IC 600mA VCE SAT Features ● ● Ordering Information Driver Stage of AF Amplifier General Purpose Switching Application Part No.