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    TRANSISTOR A 949 Search Results

    TRANSISTOR A 949 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR A 949 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607 PDF

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582 PDF

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan     		2SC5004 2SC5004 NEC 1357 LA 8873 TRANSISTOR C 4460 PDF

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944 PDF

    D 1437 transistor

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		2SC5004 D 1437 transistor PDF

    sot223 code r1k

    Abstract: Marking CB IC MARKING 106
    Contextual Info: PZT949 PNP Transistor Silicon Planar High Current Gain Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 APPLICATION A M PZT949 is designed for general purpose switching and amplifier applications.


    Original     		PZT949 OT-223 PZT949 20Amps -100mA, 18-Nov-2009 sot223 code r1k Marking CB IC MARKING 106 PDF

    lc 945 p transistor NPN

    Abstract: BFR96S
    Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


    OCR Scan     		hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S PDF

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1 PDF

    transistor NEC B 617

    Abstract: nec. 5.5 473
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range


    OCR Scan     		2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473 PDF

    BFR96S

    Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
    Contextual Info: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


    OCR Scan     		BFR96S 711002b 004S7Ã 11PHIN BFQ32S. BFR96S 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764 PDF

    BLX14

    Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
    Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z


    OCR Scan     		BLX14 BLX14 philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A PDF

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


    OCR Scan     		2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor PDF

    2SC 968 NPN Transistor

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		2SC5007 2SC 968 NPN Transistor PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF

    ESD Considerations for SOI Switch Design

    Contextual Info: ESD Considerations for SOI Switch Design Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Email: yuhyue.chen@skyworksinc.com, Tel: 949 231-3083 This paper proposes a solution that employs transistor


    Original     		PDF

    philips blx14

    Abstract: BLX14
    Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz


    OCR Scan     		bbS3T31 BLX14 philips blx14 BLX14 PDF

    MA4F004

    Contextual Info: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 PDF

    ic 763

    Abstract: SA76 Scans-009351
    Contextual Info: Si PNP TRANSISTOR â S f\7 6 3 EPOXY MOLDED, LOW NOISE AUDIO AMP. ABSOLUTE M A X IM U M RATINGS T a : 25°C 763-Y 763-W VcBO . . V CEO . . -3 0 “ 60 V -2 5 -5 0


    OCR Scan     		763-Y ic 763 SA76 Scans-009351 PDF

    samsung battery charger

    Abstract: ic 4570 8pin 8 pin ic 4570 datasheet 200B FDC638P NDP6020P TC3827
    Contextual Info: TC3827 Lithium-Ion Battery Charger FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC3827 is a battery charger controller for a single cell Li-Ion battery. Using an external PMOS transistor, safe and fast charging of a single Li-Ion cell is accomplished.


    Original     		TC3827 TC3827 TC3827-2 DS21558A samsung battery charger ic 4570 8pin 8 pin ic 4570 datasheet 200B FDC638P NDP6020P PDF

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Contextual Info: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B PDF

    100v 3A ultra fast recovery schottky diode

    Abstract: 100v 3A ultra fast recovery diode marking code SS SOT23 marking codes fairchild current buffer 150ma high efficiency rectifier 100v 1a P-channel MOSFET 100V, 10 Amps 62H101 current buffer ic 30mA 6A, 100v fast recovery diode
    Contextual Info: 19-3983; Rev 0; 1/06 KIT ATION EVALU E L B A AVAIL TFT, LCD, DC-DC Converter with Operational Amplifiers The MAX8739 includes a high-performance, step-up regulator and two high-current operational amplifiers for active-matrix thin-film transistor TFT liquid-crystal


    Original     		MAX8739 600kHz/1 MAX8739 100v 3A ultra fast recovery schottky diode 100v 3A ultra fast recovery diode marking code SS SOT23 marking codes fairchild current buffer 150ma high efficiency rectifier 100v 1a P-channel MOSFET 100V, 10 Amps 62H101 current buffer ic 30mA 6A, 100v fast recovery diode PDF

    CMS02

    Abstract: MAX8739 MAX8739ETP MMBD4148SE T2055-2 TFT LCD timing controller T-con
    Contextual Info: 19-3983; Rev 0; 1/06 KIT ATION EVALU E L B A AVAIL TFT, LCD, DC-DC Converter with Operational Amplifiers The MAX8739 includes a high-performance, step-up regulator and two high-current operational amplifiers for active-matrix thin-film transistor TFT liquid-crystal


    Original     		MAX8739 600kHz/1 MAX8739 CMS02 MAX8739ETP MMBD4148SE T2055-2 TFT LCD timing controller T-con PDF