TRANSISTOR A 935 Search Results

OPB743WZ

Abstract: OP709 OPB708 OPB709 OPB740 OPB741 OPB745 OPB746 OPB746WZ OPB747WZ
Contextual Info: Reflective Object Sensor OPB708, OPB709 OPB740 Series, OPB740WZ Series OPB708, OPB709, OPB740, OPB745 Series Features: • • • • • Focused for maximum sensitivity Phototransistor or photodarlington output Crosstalk does not exceed specified ICEO 24” 610 mm wire length

LC587204A

Abstract: LC587206A CF-455 cf 455 LC587202A LC587208A K1030 IDD41 lc587204
Contextual Info: Ordering number : EN*6008 CMOS IC LC587208A, 587206A, 587204A, 587202A 4-Bit Single-Chip Microcontroller LCD Driver ROM: 2, 4, 6, or 8 K x 16 bits, RAM: 512 × 4 bits Preliminary Overview The LC587202A through LC587208A are 4-bit CMOS microcontrollers that integrate ROM, RAM, and an

Colpitts VCO design

Abstract: gsm circuit diagram project GSM vco vco gsm gsm Handset Circuit Diagram 0603AU2R0JAT9 CR10-470J-T NE68519 VCO circuit diagram Tuner Applications APN1006
Contextual Info: Application Note A Differential VCO Design for GSM Handset Applications APN1013 The differential pair of bipolar transistors is the common building block in modern RF integrated circuits. An advantage of this architecture is its high loop gain making it popular for differential Voltage Controlled Oscillator

C3216X5R1A

Abstract: C3225X7R1E SP6691 7 pin transistor for 24v 3 amp to 220 package
Contextual Info: Solved by SP6691 TM Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LEDs @ 25mA ■ Drives up to 8 LEDs @ 20mA ■ High Output Voltage: Up to 30V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

BY248

Abstract: 11C83 MODULO-16 F4016 9LS161 divide-by-1000 CMOS COUNTER
Contextual Info: ncss^ 1 GHz DIVIDE-BY-248/256 PRESCALER 11 COO SERIES GENERAL DESCRIPTION - The 11C83 Prescaler is guaranteed to operate above 950 MHz over the 0°C to +75°C temperature range and w ith a V qq variation from +4.75 to +5.5 V. The circuit requires only one supply voltage and the clock input signal can be

1000w DC 12v to AC 220v

Abstract: DC 12v to AC 220v 1000w 1000w 12v dc to 220v ac input 220V AC output 3,3V AC RC circuit ac single 220v low voltage control diagram SE-1000-15 se-1000-48 SE-1000-SPEC
Contextual Info: SE-1000 1000W Single Output Power Supply series Features : AC input active surge current limiting AC input range selected by switch Protections: Short circuit / Overload / Over voltage / Over temperature Forced air cooling by built-in DC ball bearing fan High power density 7.3w/inch3

Contextual Info: / T u r m _ LTC1235 TECHNOLOGY Microprocessor Supervisory Circuit FCOTUIKS DCSCRIPTIOn • Guaranteed Reset Assertion at Vcc = 1V ■ 1.5mA Maximum Supply Current ■ Fast 35ns Max. Onboard Gating of RAM Chip Enable Signals ■ Conditional Battery Backup Extends Battery Life

atmel 935

Abstract: TST0922 TST0922-DBT ATMEL 1230 transistor 1527
Contextual Info: TST0922 SiGe Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium (SiGe) technology and has been

Contextual Info: S G S-T HOnSON D7C D | S T S 3 7 0 0 1 M Ì SD 7 C O S /H IO S INTEGRATED CIRCUIT 7929225 S G S 41C 08964 SEMICONDUC TOR ""CORP o r - ¥ J - 2 j HEX BUFFER • • • • • • • • 1 T T L -LO A D OUTPUT DRIVE C APAB ILITY 2 OUTPUT-DISABLE CONTROLS

S4P01

Abstract: AN569 MMSF4P01HD MMSF4P01HDR2 s4p0
Contextual Info: MMSF4P01HD Preferred Device Power MOSFET 4 Amps, 12 Volts P–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

sn76131

Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Contextual Info: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE

regulator adj pin ap note

Contextual Info: SPX1581 3A Ultra Dropout Voltage Regulator Fast Response, Adjustable & Fixed FEATURES • Low Dropout Voltage 500mV at 5A Full Load Current ■ Adjustable Ouput Down to 1.2V from ATX Power Supply SPX1581 ■ Fixed Output Voltages of 3.3V, 2.8V and 2.5V

SD57045

Abstract: 945 TRANSISTOR 700B M250 SD57045-01
Contextual Info: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01

RF5111

Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
Contextual Info: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

SP706REN

Abstract: SP708SEN SP706P SP706S SP706T SP708R SP708S SP708T SP706SE SP706TEN
Contextual Info: SP706P/R/S/T, SP708R/S/T +3.0V/+3.3V Low Power Microprocessor Supervisory Circuits • Precision Low Voltage Monitor: SP706P/R and SP708R at +2.63V SP706S and SP708S at +2.93V SP706T and SP708T at +3.08V ■ RESET Pulse Width - 200ms ■ Independent Watchdog Timer - 1.6 sec

Contextual Info: RF3229 QUAD-BAND GMSK TXM, 2 RX AND 3 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features        Applications    Battery Powered 3G

SPX432M

Abstract: CDRH5D28 MBR0520 SP6641 SP6641A SP6641B ZHCS2000 4.Vout sot-23-5 mark 2L SOT-23 6 a3 sot23-4
Contextual Info: SP6641A/6641B 500mA Alkaline DC/DC Boost Regulator in SOT-23 • Ultra Low Quiescent Current: 10µA ■ Wide Input Voltage Range: 0.9V to 4.5V ■ 90mA IOUT at 1.3V Input SP6641A-3.3V ■ 500mA IOUT at 2.6V Input (SP6641B-3.3V) ■ 100mA IOUT at 2.0V Input (SP6641A-5.0V)

dx 1305

Abstract: 485G AND8020 NBSG86A NBSG86ABA NBSG86ABAR2 1B39
Contextual Info: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi−function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a

485G

Abstract: NBSG72A NBSG72AMN NBSG72AMNG tip 410 transistor
Contextual Info: NBSG72A 2.5V/3.3V SiGe Differential 2 x 2 Crosspoint Switch with Output Level Select The NBSG72A is a high−bandwidth fully differential 2 X 2 crosspoint switch with Output Level Select OLS capabilities. This is a part of the GigaComm family of high performance Silicon

485G

Abstract: NBSG72A NBSG72AMN NBSG72AMNG NBSG72AMNR2G Germanium Transistor
Contextual Info: NBSG72A 2.5V/3.3V SiGe Differential 2 x 2 Crosspoint Switch with Output Level Select The NBSG72A is a high−bandwidth fully differential 2 X 2 crosspoint switch with Output Level Select OLS capabilities. This is a part of the GigaComm family of high performance Silicon

transistor c246

Abstract: transistor c245 transistor c243 c243 SA900 L372 c371 transistor SA900BE IS-136 SA7025
Contextual Info: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997

26c18

Abstract: ST2100 ST2101 1103h MUX41 TABLE10-1 1185H PCC5
Contextual Info: ST Sitronix ST2100 8 BIT Microcontroller with 2M bytes ROM PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES „ „ „ „ „ „ „ „ „ „ 8-bit static pipeline CPU ROM: 2M x 8 bits RAM: 4K x 8 bits External memory control up to 8M x 8 bits