TRANSISTOR A 1006 Search Results

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

C570X7R1H106KT000N

Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

APT13003Z-E1

Abstract: transistor 2808 APT13003 bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.

Contextual Info: BLF888D; BLF888DS UHF power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter

Contextual Info: Preliminary Datasheet 2A CMOS LDO Regulator AP2132 General Description Features The AP2132 are positive voltage regulator ICs fabricated by CMOS process. It consists of a voltage reference, an error amplifier, a power transistor, a resistor network for setting output voltage, a current

resistor 220 ohm

Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Contextual Info: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization

RP110

Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-100610 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Contextual Info: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

CGD942C

Contextual Info: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

CGD944C

Contextual Info: CGD944C 870 MHz, 25 dB gain power doubler amplifier Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

Contextual Info: BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 — 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

TRANSISTOR 1003

Abstract: CGD1042HI
Contextual Info: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1042H

Abstract: BV 1 150
Contextual Info: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 3 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

KAPPA RELAY

Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 6v ls1 relay
Contextual Info: HIP0061 TM 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

NXP amplifier

Contextual Info: CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 4 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs MMIC.

CGD1046HI

Contextual Info: CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 — 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 5.1 MAX. • W ith Built-in Bias Resistors

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1445 IRHN9230 R EP ETITIVE AVA LA NC H E A N D dv/dt RATED HEXFET TRANSISTOR P -C H A N N E L RAD HARD -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

buk6e2r3-40c

Contextual Info: BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been