TRANSISTOR 9407 Search Results

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

9407A

Abstract: FHK9407A "Field Effect Transistor" field effect transistor
Contextual Info: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).

IRG4BC20W-S

Contextual Info: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4BC20W-S

Contextual Info: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20UD-S

Abstract: 50s MARKING CODE
Contextual Info: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20UD-S

Contextual Info: PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

acumos

Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

nmos pmos array

Abstract: mf10 A300 list of n channel fet Acumos n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

abb r1561

Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
Contextual Info: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .

HFA30TA60CS

Abstract: IRFP250
Contextual Info: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

Contextual Info: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

HFA16TA60C

Abstract: HFA30TA60C
Contextual Info: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI

Contextual Info: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

HFA30TA60CS

Abstract: IRFP250 hfa30ta60cspbf
Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

Contextual Info: PD - 95687A HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A

Contextual Info: HFA30TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

marking dt2

Abstract: HFA50PA60C IRFP250
Contextual Info: HFA50PA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 25 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

P035H

Abstract: HFA16PA60C HFA32PA120C IRFP250 vs 1838 b 1838 ir
Contextual Info: PD - 95687A HFA32PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM per Leg Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 2 VR = 1200V VF typ. = 2.3V IF(AV) = 16A

HFA30TA60C

Abstract: HFA16TA60C IRFP250 vishay transistor date code dt2 marking code
Contextual Info: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI