TRANSISTOR 936 Search Results

NEC 2905

Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain

2108 npn transistor

Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION • Two transistors in one SC70

PNP TRANSISTOR SC-70

Contextual Info: MSB92WT1, MSB92AWT1 Preferred Device Product Preview PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323

NEC MARKING surface

Abstract: C11531E FP1F3P nec S33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive

c39 transistor

Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,

Contextual Info: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter

transistor A798

Abstract: a1016 616 transistor
Contextual Info: DOC. NO. 05CB-000392 PART NO. 0506-001002 PRFL IMINARY DATA SHEET NEC SILICON TRANSISTOR PA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The PA800T has built-in 2 low-voltage transistors which are designed

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

transistor bfr96

Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

lem 812

Abstract: NF 936 2SC4228 KB MARKING
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.

2SD1630

Contextual Info: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching

transistor A 935

Contextual Info: e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

BFR96 philips

Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

2SA1151

Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
Contextual Info: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

transistor A 935

Abstract: transistor 936
Contextual Info: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.