TRANSISTOR 835 DATASHEET Search Results

SIO-100S

Abstract: SIO-120AI analogue input MODBUS converter rs485 multiplexer 120AI modbus for rs485 15625-Hz SIO-110DX SIO-130AO HAS 100S
Contextual Info: technical technical datasheet datasheet SIO-100S Series Industrial Serial I/O • Analogue and Digital I/O multiplexer • Data transfer via Modbus or exception reporting protocol • RS232 and RS485 communication ports • I/O interface for MTL wireless networks

TRANSISTOR 58050

Abstract: 58050 transistor
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN

Contextual Info: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for

Contextual Info: , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N4272 BIPOLAR NPN SILICON TRANSISTOR TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 3 ^6-8960 h» 1 ""^ r" FEATURES - - 1 i c .um. 19-1 } LiJ 1*^ . '-— GENERAL PURPOSE NPN TRANSISTOR smt< VCBO

Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B

Contextual Info: i, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS COMMON EMITTER POUT = 45 W MIN. WITH 5.0 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1434 BRANDING SD1434 PIN CONNECTION

transistor bt 808

Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,

ceh2288

Contextual Info: CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS ON = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package.

Semiconductor 1346 transistor

Abstract: LT1764A SHD501355 SHD501355A transistor 835
Contextual Info: SENSITRON SEMICONDUCTOR SHD501355 SHD501355A TECHNICAL DATA DATA SHEET 4054, REV. - LOW DROP OUT POSITIVE ADJUSTABLE VOLTAGE REGULATOR DESCRIPTION: 3A, VERY LOW DROPOUT ADJUSTABLE POSITIVE REGULATOR FEATURES: ● LOW DROPOUT, 340mV at 3A Output Current ● FAST RESPONSE

Contextual Info: CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS ON = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CEP740A

Abstract: CEB740A CEF740A CEI740A S83-5
Contextual Info: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).

CEP740A

Abstract: CEB740A CEF740A CEI740A
Contextual Info: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).

transistor 2062

Abstract: ZXTC2062E6
Contextual Info: A Product Line of Diodes Incorporated ZXTC2062E6 ADVANCE INFORMATION 20V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP combination BVCEO > 20 -20 V • Case: SOT26 • Case Material: molded plastic, “Green” molding compound

TRANSISTOR MARKING 1d9

Abstract: TS16949 ZXTN19060CFF ZXTP19060CFF ZXTP19060CFFTA
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

TRANSISTOR MARKING 1d9

Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

Contextual Info: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications

SMD Transistor g16

Abstract: smd diode JC 9E T0252 DS4988-2 High-Speed-Powerline ITH08F06 ITH08F06B ITH08F06G smd diode UJ 64 A
Contextual Info: M ITEL ITH08F06 - _ High Speed Powerline N-Channel IGBT S E M IC O N D U C T O R . . . , A dvance Inform ation DS4988-2.3 O ctober 1998 T h e IT H 0 8 F 0 6 is a v e ry ro b u s t n -c h a n n e l,

2N3819 spice model

Abstract: construction of varactor diode bfr90 equivalent ZMV830B 2N3819 S T A 933 ZMV836B ZC829A transistor 2N3819 2N3819 equivalent
Contextual Info: Applications Note 9 Issue 4 July 2002 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3513ZMTRPBF IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

ir3513z

Abstract: IR3513ZMTRPBF IR3513ZM current loop IR3513ZMT
Contextual Info: IR3513Z DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513Z Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513Z to implement a stand-alone single-phase regulator or

IR3505

Abstract: IR3513MTRPBF 1718-Type
Contextual Info: IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

IR3513ZMTRPBF

Abstract: IR3505 IR3513MTRPBF IR3513
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3513ZMTRPBF IR3513 DATASHEET XPHASE3TM POL CONTROL IC DESCRIPTION The IR3513 Control IC provides overall control of a scalable number of phases along with an internal gate driver, current sense/sharing, and PWM. This allows the IR3513 to implement a stand-alone single-phase regulator or

intel 1302 ROM

Abstract: 292099 Software Drivers Application Note 5002 28F008SA 28F008SAC AP-360 AP-364 X28F008SAC-120 SmartDie
Contextual Info: PRELIMINARY 28F008SAC 8-MBIT 1-MBIT X 8) FlashFile MEMORY DEVICE SmartDie™ Product Specification • Same Function as 28F008SA-120 ■ ■ ■ ■ — New Reduced Die Size High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks