TRANSISTOR 7552 Search Results

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR18125EF

Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
Contextual Info: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

AGR18030EF

Abstract: JESD22-C101A
Contextual Info: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

6603 Shenzhen

Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Contextual Info: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Z9 TRANSISTOR SMD

Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Contextual Info: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

J182 transistor

Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced

equivalent transistor PT 3500

Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

"RF Power Amplifier"

Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
Contextual Info: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

j561

Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Contextual Info: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

Contextual Info: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

AGR09030GUM

Abstract: JESD22-C101A RF35
Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

c5047

Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR19K180E

Abstract: AGR19K180EF JESD22-C101A JESD22-C101-A
Contextual Info: Preliminary Product Brief April 2004 AGR19K180E 180 W, 1.840 GHz—1.870 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR19K180EF is a high-voltage, gold-metalized, laterally diffused me tal oxide semiconductor LDMOS RF power transistor suitable for Korean PCS

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

AGR09060GUM

Abstract: JESD22-C101A
Contextual Info: Preliminary Product Brief March 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR21090

Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
Contextual Info: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

AGR21045E

Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
Contextual Info: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

JESD22-C101a

Abstract: AGR09030XUM
Contextual Info: Preliminary Product Brief March 2004 AGR09030XUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

AGR09030E

Abstract: AGR09030EF AGR09030EU JESD22-C101A J02-1
Contextual Info: Preliminary Data Sheet April 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular