TRANSISTOR 733 A Search Results

TLP 527

Abstract: rcbo type ac LP-733
Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP733,734 TLP 733 OFFICE M ACHINE. H O USEH O LD USE EQ U IPM EN T. SOLID STATE RELAY. SW ITCHING P O W E R SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

2SC733

Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes

2SC2839

Abstract: sanyo 2033
Contextual Info: Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions • Very small package enabiling compactness and slimness of sets. · High fT and small cre fT=320MHz typ, cre=0.95pF typ . unit:mm

transistor sta 733

Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

TIP168

Contextual Info: TIP168A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 18A • Collector dissipation Pc =100W Tc = 25 t (ABSOLUTE MAXIMUM RATINGS (Ta = 25 X) i Symbol Rating Unit Collector-Base Voltage VcBO

ba3706

Abstract: BA3707
Contextual Info: Audio ICs Mute detector IC BA3707 The BA3707 is a mute detector, with an on-chip output transistor that can directly drive a solenoid. It features low operating voltage, and a wide power supply voltage range. FApplications Mute, and end-of-tape detector for tape players

DIM800ECM33-F000

Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*

2n2646 pin

Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
Contextual Info: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS

3K45

Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%

Unijunction transistor 2N2646 of

Abstract: 2N2646P
Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER

DIM1200ESM33-F000

Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: bb 5 3 *i31 ttOSlbflH ODD P hilips Sem iconducto APX Product specification NPN 1 GHz video transistor ^ BFQ161 N AUER PHILIPS/MSCRETE b'JE » PINNING FEATURES • Low output capacitance 1 DESCRIPTION PIN • High gain bandwidth product 1 base • High current applicability

12v DC geared motor

Abstract: hELLA 12V 40A Relay ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse anps039e bts 425 l1 OSRAM halogen lamp H4 fuse smd tn BTS 442 E2 equivalent car halogen lamp h4
Contextual Info: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Fuse Function with PROFET Highside Power Switches Abstract: The protection functions originally incorporated in smart power switches for self-protection have become so sophisticated that they are now capable of protecting not only themselves but

Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal DESCRIPTION X3A-BFT93 MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole wafer, fully tested but unsawn. Top metallization

Contextual Info: bb53T31 0032210 30S Philips Semiconductors M APX Product specification PNP 1 GHz video transistor crystal ^ X3A-BFQ254 N AMER pniLIPS/DISCRETE b'lE D • MECHANICAL DATA DESCRIPTION Crystal PNP crystal used in BFQ251 TO-92 , BFQ252(A) (SOT32) and BFQ256(A) (SOT223). Crystals are

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

Contextual Info: ^ 5 3 ^ 3 1 0032216 bTfci M A P X Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal X3A-BFT92 N AUER PHILIPS/DISCRETE DESCRIPTION LRE 1 MECHANICAL DATA PNP crystal used in BFQ51 SOT37 , BFQ52 (TO-72) and BFT92 (SOT23). Crystals are supplied as whole

BFY90 PHILIPS

Contextual Info: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole

2n4416

Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER

Contextual Info: Philips S em iconductors Product specification bbS3131 0032202 23T « A P X NPN 7 GHz wideband transistor crystal X3A-BFG134 N ARER PHILIPS/DISCRETE b=]E ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR134 SOT37 , BFQ135 (SOT 172) and BFG135 (SOT223). Crystals are supplied

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.

Contextual Info: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied