TRANSISTOR 733 A Search Results

TLP 527

Abstract: rcbo type ac LP-733
Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP733,734 TLP 733 OFFICE M ACHINE. H O USEH O LD USE EQ U IPM EN T. SOLID STATE RELAY. SW ITCHING P O W E R SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

2SC2839

Abstract: sanyo 2033
Contextual Info: Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions • Very small package enabiling compactness and slimness of sets. · High fT and small cre fT=320MHz typ, cre=0.95pF typ . unit:mm

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

TIP168

Contextual Info: TIP168A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 18A • Collector dissipation Pc =100W Tc = 25 t (ABSOLUTE MAXIMUM RATINGS (Ta = 25 X) i Symbol Rating Unit Collector-Base Voltage VcBO

DIM800ECM33-F000

Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*

Unijunction transistor 2N2646 of

Abstract: 2N2646P
Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER

DIM1200ESM33-F000

Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: bb 5 3 *i31 ttOSlbflH ODD P hilips Sem iconducto APX Product specification NPN 1 GHz video transistor ^ BFQ161 N AUER PHILIPS/MSCRETE b'JE » PINNING FEATURES • Low output capacitance 1 DESCRIPTION PIN • High gain bandwidth product 1 base • High current applicability

12v DC geared motor

Abstract: hELLA 12V 40A Relay ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse anps039e bts 425 l1 OSRAM halogen lamp H4 fuse smd tn BTS 442 E2 equivalent car halogen lamp h4
Contextual Info: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Fuse Function with PROFET Highside Power Switches Abstract: The protection functions originally incorporated in smart power switches for self-protection have become so sophisticated that they are now capable of protecting not only themselves but

Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

Contextual Info: bb53T31 0032210 30S Philips Semiconductors M APX Product specification PNP 1 GHz video transistor crystal ^ X3A-BFQ254 N AMER pniLIPS/DISCRETE b'lE D • MECHANICAL DATA DESCRIPTION Crystal PNP crystal used in BFQ251 TO-92 , BFQ252(A) (SOT32) and BFQ256(A) (SOT223). Crystals are

Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BFY90 PHILIPS

Contextual Info: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole

Contextual Info: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

Contextual Info: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole

Contextual Info: bbS3^31 0032204 Oil Philips Semiconductors • APX Product specification NPN 12 GHz wideband transistor crystal X3A-BFQ33 N A HER PHILIPS/DISCRETE DESCRIPTION b^E V MECHANICAL DATA NPN crystal used in BFQ33C SOT173 and BFG33 (SOT143). Crystals are supplied as whole wafer, fully

Contextual Info: APX bbS3^31 0032213 014 Philips Semiconductors Product specification NPN 6 GHz wideband transistor X3A-BFR91A crystal N AUER PHILIPS/DISCRETE bRE D DESCRIPTION MECHANICAL DATA Crystal NPN crystal used in BFR91A SOT37 , BFQ22S (TO-72) and BFR93A (SOT23). Crystals are supplied as whole

Contextual Info: bbS3R31 DD3SE1S 166 M A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor X3A-BFR90A crystal N APER PHILIPS/DISCRETE bRE D — MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR90A SOT37 , BFQ53 (TO-72) and BFR92A (SOT23). Crystals are supplied as whole

BFG33

Abstract: BFQ33C X3A-BFQ33 SOT173
Contextual Info: Product specification Philips Semiconductors ~3Ho NPN 12 GHz wideband transistor crystal PHILIPS INTERNATIONAL 5bE D DESCRIPTION • X3A-BFQ33 711GflSfc, GDMbGTM 713 H P H I N M ECHANICAL DATA NPN crystal used in BFQ33C SOT173 and BFG33 (SO U 43). Crystals are supplied as whole wafer, fully

Contextual Info: _ PhMip^em iconductoi^^^ bbSBTBl 0 Q 3 2 2 n 532 B A P X Product specification PNP 5 GHz wideband transistor crystal X3A-BFT93 N AUER PHILIPS/DISCRETE DESCRIPTION b^E » MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

Contextual Info: • Philips Semiconductors ^ 5 3 ^ 3 1 0024101 IAPX Product specification N AMER PHILIPS/DISCRETE b7E D N-channel field-effect transistor 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections

Contextual Info: 7 - v IS0C0I1 COMPONENTS LTD 7SC D 4flflbSlD 00D0P12 733 • /- S’ * ISO hub 1 OPTICALLY COUPLED ISOLATORS ABSOLUTE M A XIM UM RATINGS 25°C unless otherwise noted Storage Tem perature . -55°C t o + 1 50°C

BFQ32

Abstract: BFQ32S BFG31 BFQ149 X3A-BFQ32
Contextual Info: Philips Semiconductors Product specification T-3|-c?o PNP 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL 711Dfl2b OOMbCHB flfl? • PHIN 5bE t DESCRIPTION X3A-BFQ32 MECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole

X3A-BFT93

Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole