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    TRANSISTOR 733 A Search Results

    TRANSISTOR 733 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR 733 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TLP 527

    Abstract: rcbo type ac LP-733
    Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP733,734 TLP 733 OFFICE M ACHINE. H O USEH O LD USE EQ U IPM EN T. SOLID STATE RELAY. SW ITCHING P O W E R SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a


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    TLP733 TLP734 UL1577, E67349 BS415 BS7002 EN60950) SS4330784 TLP 527 rcbo type ac LP-733 PDF

    2SC733

    Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
    Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes


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    8SC735 2SC735 2sc733 3SC733-QR a4l01 8SC733-BL 2SC733-0R 270Hz 8S0733-BL 2SC733 transistor 2sc733 GR 733 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733 PDF

    2SC2839

    Abstract: sanyo 2033
    Contextual Info: Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions • Very small package enabiling compactness and slimness of sets. · High fT and small cre fT=320MHz typ, cre=0.95pF typ . unit:mm


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    EN733D 2SC2839 320MHz 2SC2839] 2SC2839 sanyo 2033 PDF

    transistor sta 733

    Abstract: IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors IRF730FI 730 mos IRF732
    Contextual Info: 30E D m 7 ^ 2 3 7 OD2T7*iS a_• | / T 7 S GS-THOM SO N IRF 730/FI-731/FI 4 T /W[ « [ I » ! « ! _ IRF 732/FI-733/FI 1 6 S-THOMSON TYPE V DSS IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI 400 V 400 V 350 V 350 V 400 V 400 V 350 V


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    730/FI-731/FI 732/FI-733/FI IRF730 IRF730FI IRF731 IRF731FI IRF732 IRF732FI IRF733 IRF733FI transistor sta 733 IRF 730 TRANSISTOR IRF 318 J CL66 irf 80 n Ultrasonic power generator schematic irf transistors 730 mos PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    TIP168

    Contextual Info: TIP168A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 18A • Collector dissipation Pc =100W Tc = 25 t (ABSOLUTE MAXIMUM RATINGS (Ta = 25 X) i Symbol Rating Unit Collector-Base Voltage VcBO


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    TIP168A TIP168 PDF

    ba3706

    Abstract: BA3707
    Contextual Info: Audio ICs Mute detector IC BA3707 The BA3707 is a mute detector, with an on-chip output transistor that can directly drive a solenoid. It features low operating voltage, and a wide power supply voltage range. FApplications Mute, and end-of-tape detector for tape players


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    BA3707 BA3707 300mA BA3706 BA3706 BA3706. PDF

    DIM800ECM33-F000

    Contextual Info: DIM800ECM33-F000 Single Switch IGBT Module DS5815-1.0 Nov. 2004 LN23667 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base-plate with AIN Substrate KEY PARAMETERS VCES VCE (sat)*


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    DIM800ECM33-F000 DS5815-1 LN23667) DIM800ECM33-F000 PDF

    2n2646 pin

    Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
    Contextual Info: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS


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    0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS PDF

    3K45

    Contextual Info: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%


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    180A020 3K45 PDF

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


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    2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P PDF

    DIM1200ESM33-F000

    Contextual Info: DIM1200ESM33-F000 Single Switch IGBT Module DS5831-1.0 JULY. 2005 LN23824 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated MMC Base with AIN Substrates • Lead Free construction • High Thermal Cycling Capability KEY PARAMETERS


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    DIM1200ESM33-F000 DS5831-1 LN23824) DIM1200ESM33-F000 PDF

    Contextual Info: bb 5 3 *i31 ttOSlbflH ODD P hilips Sem iconducto APX Product specification NPN 1 GHz video transistor ^ BFQ161 N AUER PHILIPS/MSCRETE b'JE » PINNING FEATURES • Low output capacitance 1 DESCRIPTION PIN • High gain bandwidth product 1 base • High current applicability


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    BFQ161 SB033 MEA205 MEAS03 PDF

    12v DC geared motor

    Abstract: hELLA 12V 40A Relay ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse anps039e bts 425 l1 OSRAM halogen lamp H4 fuse smd tn BTS 442 E2 equivalent car halogen lamp h4
    Contextual Info: HL application note Dr. Alfons Graf Siemens AG, HL PS TM Hannes Estl Siemens AG, HL PS TM2 Fuse Function with PROFET Highside Power Switches Abstract: The protection functions originally incorporated in smart power switches for self-protection have become so sophisticated that they are now capable of protecting not only themselves but


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    de/Semiconductor/products/36/pdf/baba96a de/Semiconductor/products/36/pdf/hdt de/Semiconductor/products/36/pdf/hdt972e Anps039e 12v DC geared motor hELLA 12V 40A Relay ELECTRONIC 12V RELAY HELLA ptc resetable low current fuse bts 425 l1 OSRAM halogen lamp H4 fuse smd tn BTS 442 E2 equivalent car halogen lamp h4 PDF

    Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole


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    bbS3T31 DD32EQ5 X3A-BFQ34 BFQ34T BFQ34 OT172) BFG35 OT223) X3A-BFQ34 PDF

    Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal DESCRIPTION X3A-BFT93 MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole wafer, fully tested but unsawn. Top metallization


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    X3A-BFT93 BFQ23 BFQ24 BFT93 PDF

    Contextual Info: bb53T31 0032210 30S Philips Semiconductors M APX Product specification PNP 1 GHz video transistor crystal ^ X3A-BFQ254 N AMER pniLIPS/DISCRETE b'lE D • MECHANICAL DATA DESCRIPTION Crystal PNP crystal used in BFQ251 TO-92 , BFQ252(A) (SOT32) and BFQ256(A) (SOT223). Crystals are


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    bb53T31 X3A-BFQ254 BFQ251 BFQ252 BFQ256 OT223) PDF

    Contextual Info: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) PDF

    Contextual Info: ^ 5 3 ^ 3 1 0032216 bTfci M A P X Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal X3A-BFT92 N AUER PHILIPS/DISCRETE DESCRIPTION LRE 1 MECHANICAL DATA PNP crystal used in BFQ51 SOT37 , BFQ52 (TO-72) and BFT92 (SOT23). Crystals are supplied as whole


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    X3A-BFT92 BFQ51 BFQ52 BFT92 PDF

    BFY90 PHILIPS

    Contextual Info: bbS3T31 0032220 254 Philips Semiconductors • AP X Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 \ N AMER PHILIPS/DISCRETE DESCRIPTION bRE D MECHANICAL DATA Crystal NPN crystal used in BFW92 SOT37 , BFY90 (TO-72) and BFS17 (SOT23). Crystals are supplied as whole


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    bbS3T31 X3A-BFW92 BFW92 BFY90 BFS17 BFY90 PHILIPS PDF

    2n4416

    Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
    Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER


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    2N4416; 2N4416A 2N4416 2n4416 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A PDF

    Contextual Info: Philips S em iconductors Product specification bbS3131 0032202 23T « A P X NPN 7 GHz wideband transistor crystal X3A-BFG134 N ARER PHILIPS/DISCRETE b=]E ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR134 SOT37 , BFQ135 (SOT 172) and BFG135 (SOT223). Crystals are supplied


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    bbS3131 X3A-BFG134 BFR134 BFQ135 BFG135 OT223) X3A-BFG134 PDF

    Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.


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    X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134) PDF

    Contextual Info: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


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    bbS3T31 0Q322Dfl X3A-BFQ195 BFG195 OT103) BFG197 OT143) BFG198 OT223) PDF