BUY49P
Abstract: 6Bs transistor SGS Transistor sc06960 0118 transistor Transistor 78 L 05 7R2R237
Contextual Info: r z 7 SCS-1H0 MS0 N ^ 7# Rsiisæii[Liieî^ iiiei BUY49P SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUY49P is a silicon epitaxial planar NPN transistor in jedec SOT-32 plastic package. It is used in high-current switching applications up to
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buy49pot-327r2r2376bs transistor+4sgs transistorsc069600118 transistortransistor 78 l 05
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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hmxr-500113001 yf 09 transistorhp 5082 70005082-0825+633150a2n6838hxtr 3101hxtr 3101 transistor5082-2815hsch-1001
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egs SOT23
Abstract: BC817K-40 thermal resistance
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+8bc817-16bc817k-16bc817-25bc817k-25bc817-25wbc817k-25wegs sot23bc817k-40 thermal resistance
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6CS transistor
Abstract: transistor 6cs
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+8bc817-16bc817-25bc817-25wbc817-40bc817-40wbc818-16w6cs transistortransistor 6cs
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transistor 6cs
Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+11bc817-16bc817k-16bc817-25bc817k-25bc817-25wot323transistor 6cs6cs transistor6as sot23marking 6cs6bs transistor
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bc817
Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration
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bc817bc818bc807bc808+6bc817-16bc817-25bc817-25wot323bc817-40bc817-40w
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C2320
Abstract: Q62702-C2320 BC 170 transistor TRANSISTOR c2324 transistor 6cs ic 817 transistor 6bs 6CS transistor transistor bc icbo nA npn Q62702-C2278
Contextual Info: BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration Package
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17-16wbc807wbc808wq62702-c2320+12ot-32317-25wq62702-c227817-40wc2320bc 170 transistortransistor c2324transistor 6csic 817transistor 6bs6cs transistortransistor bc icbo na npn
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BC 170 transistor
Contextual Info: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration
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17-16wbc807wbc808wot-323+7q62702-c232118-16wq62702-18-25wq62702-c232318-40wbc 170 transistor
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BC 170 transistor
Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
Contextual Info: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W
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bc807wbc808w17-16w17-25w+1517-40w18-16w18-25w18-40wq62702-c2320q62702-c2278bc 170 transistorbc 471transistor bc 4706bs transistorsot-323 ntransistor 6cs1b marking transistor marking 6bsbc 170 csot 323 lb
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1B marking transistor marking 6Bs
Abstract: BC817W SOT23 6fs sot23 105BC transistor 6bs marking 6bs
Contextual Info: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)
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bc817/bc818bc807bc808+12bc817-16bc817k-16bc817-25bc817k-25bc817-25wbc817k-25w1b marking transistor marking 6bsbc817w sot236fs sot23105bctransistor 6bsmarking 6bs
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6as sot23
Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
Contextual Info: BC817K./BC818K. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking Pin Configuration
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bc817k/bc818kbc817k-16bc817k-16w+9bc817k-25bc817k-25wbc817k-40bc817k-40wbc818k-16wbc818k-406as sot23marking 6bs1b marking transistor marking 6bs
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transistor 6cs
Abstract: 6CS transistor BC817 BC818K-40 ic 817 1B marking transistor marking 6Bs MARKING 6Cs SOT23 6bs transistor BC817 INFINEON BC808
Contextual Info: BC817./BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP • Pb-free (RoHS compliant) package 1)
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bc817/bc818bc807bc808+14bc817-16bc817k-16bc817-25bc817k-25bc817-25wot323transistor 6cs6cs transistorbc818k-40ic 8171b marking transistor marking 6bsmarking 6cs sot236bs transistorbc817 infineon
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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817-U
Abstract: 6Bs transistor
Contextual Info: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197
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Contextual Info: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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marking 6bs
Abstract: ic 817 BC817U SC74
Contextual Info: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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Contextual Info: BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2
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BC817U
Abstract: SC74 BCW66H
Contextual Info: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1)
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marking 6bs
Contextual Info: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package
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Contextual Info: BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain 4 3 5 2 6 • Low collector-saturation voltage 1 • Two galvanic internal isolated transistors with good matching in one package C1 B2 E2 6 5 4 TR2 TR1
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C2320
Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
Contextual Info: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W
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17-16w17-25w17-40w18-16w+1518-25w18-40wq62702-c2320q62702-c2278q62702-c2321q62702-c2322c2320bc 170 transistortransistor 6cstransistor c2324bc817wtransistor bc icbo na npntransistor marking a02c2278c2324
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TRANSISTOR BFR97
Abstract: BFR97 2N3866 2N3866 SCHEMATIC 2N3866-BFR97 2N3866 metal Planar choke Transistor 2N3866 data 2n3866
Contextual Info: 30E D • 7^53537 0031187 b ■ \ ‘3 > 0 5 SGS-THOMSON IMOœiLlICTliMOûS 2N3866 BFR97 S G S-TH0MS0N VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifier cir
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qq311fl72n3866bfr972n3866-bfr97+950j-lt-33-05200mwtransistor bfr972n3866 schematic2n3866 metalplanar choketransistor 2n3866data 2n3866
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JIS B1181
Abstract: B1181 TRANSISTOR b1181 AC229 B1251 B1256 spring washer b1257 AC331 ac332
Contextual Info: [ 6 ] Accessories [ 6 ] Accessories [ 6 ] Accessories When semiconductors are used, accessories are sometimes required. For these accessories, the numbers shown below the device dimensions on the technical data sheet are applicable. The uses of some typical accessories are shown in the illustrations below.
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2-10p1bo-220abac604rh-14+11ac229ac311jis b1181b1181transistor b1181b1251b1256spring washerb1257ac331ac332
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sCapacitor
Abstract: C5068 12v zener diode JEDEC 1N
Contextual Info: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control
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