TRANSISTOR 6A Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

TV power transistor datasheet

Abstract: power transistor 2SD2599 equivalent 2SC5411 transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855
Contextual Info: Part Number Product Category Application Scope 2SC5280 Horizontal Deflection Output Power Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor

CPH5524

Contextual Info: Ordering number : ENA0859A CPH5524 Bipolar Transistor http://onsemi.com – 50V, (–)6A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

transistor BUX

Abstract: BUX14 TR07
Contextual Info: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

transistor 1000V 6A

Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Contextual Info: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

BFW16

Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Contextual Info: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of

Vbe 40 transistor

Abstract: SQD300BA60 600v 10A ultra fast recovery diode diode module 6A darlington power transistor 10a fast recovery diode 1a trr 200ns
Contextual Info: TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is electrically isolated

SQD300A60

Abstract: A1380 300V switching transistor SQD300A40 M6 transistor
Contextual Info: TRANSISTOR MODULE SQD300A40/60 UL;E76102 M SQD300A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

300V switching transistor

Abstract: Vbe 40 transistor QCA300BA60
Contextual Info: TRANSISTOR MODULE Hi- QCA300BA60 UL;E76102 M QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA300BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

2SB775

Abstract: 2SB77 2SD895 1116MW
Contextual Info: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3

60V transistor npn 2a

Contextual Info: PZT158 NPN Transistor Elektronische Bauelemente Silicon Planar High Current Transistor RoHS Compliant Product SOT-223 Description The PZT158 is designed for general purpose switching and amplifier applications. Features * 6Amps Continous Current, Up To 20Amps Peak Current

UN1518

Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number

Contextual Info: TRANSISTOR MODULE SQQ300AA100 UL;E76102 M S Q D 3 0 0 A A 10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

UN1518

Abstract: UN1518-AE3-R UN1518L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) Lead-free: UN1518L Halogen-free:UN1518G „ ORDERING INFORMATION Normal UN1518-AE3-R

T14P12DX

Abstract: MO-187 ZXT14P12DX ZXT14P12DXTA ZXT14P12DXTC DSA003747
Contextual Info: ZXT14P12DX SuperSOT4 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 16m ; IC= -6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

Contextual Info: UTC TIP42C NPN EPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP42C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip41C TO-220

t14n50

Abstract: JEDEC MO-187 MO-187 ZXT14N50DX ZXT14N50DXTA ZXT14N50DXTC DSA0037473 A1BL
Contextual Info: ZXT14N50DX SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR  FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R