TRANSISTOR 641 Search Results

on 222 transistor

Abstract: 4503 ISAHAYA Diagrams
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）

Japanese Transistor

Abstract: RTGN141AP RTGN141 rtgn14
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN141AP PRELIMINARY TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN141AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=10kΩ,R2=10kΩ）

Japanese Transistor

Abstract: R1047K 0.47k resistor rtgn426
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN426AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.47kΩ,R2=4.7kΩ）

RTGN234AP

Abstract: rtgn234 Japanese Transistor isahaya transistor electronics
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN234AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）

RTGN14BAP

Abstract: 4503 swithing rtgn14
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A

RTGN432P

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN432P is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=4.7kΩ,R2=10kΩ） ● High collector current IC=1A

RTGN131AP

Abstract: 4503 rtgn131
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

RT1N241

Abstract: RT3T22M
Contextual Info: PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N241 chip and RT1P241 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.

RT1P144

Abstract: RT3T14M
Contextual Info: PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N144 chip and RT1P144 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.

transistor marking N1

Abstract: RT1N141 RT3N11M
Contextual Info: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3N77M

Contextual Info: PRELIMINARY RT3N77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N140 chip and RT1N140 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.

RT3N66M

Contextual Info: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N430 chip and RT1N430 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.

RT1P141

Abstract: RT3P11M
Contextual Info: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P11M is compound transistor built with two RT1P141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: RT3P77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

Contextual Info: RT3PEEM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

RT3N22M

Abstract: RT1N241 RT1N* MARKING
Contextual Info: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

Contextual Info: PRELIMINARY RT3TTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION is a composite transistor built with 2.1 RT1N250 chip and RT1P250 chip in SC-88 package. 1.25 2.0 Each transistor elements are independent.

RT3P66M

Contextual Info: PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P66M is compound transistor built with two RT1P430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.

2SC5938

Abstract: RT3C55M
Contextual Info: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.

RT1P441

Abstract: RT3P33M
Contextual Info: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.