TRANSISTOR 600V 7A Search Results

QM20TD-H

Abstract: mitsubishi air conditioner E80276 all transistor qm20td-h application note
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H • • • • • IC Collector current . 20A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75

Contextual Info: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOD7S60

Abstract: aou7s60
Contextual Info: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOWF7S60

Contextual Info: AOW7S60/AOWF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOW7S60 & AOWF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

7S60

Abstract: AOTF7S60L
Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOB7S60

Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: Ordering number: ENN6994 | NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. ♦High breakdown voltage VcB0 = 1 600V . * High reliability^Adoption of HVP process).

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C-107

Abstract: C-108 IRGBC30FD2 c103 a ge
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C-107

Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP7N60 N-Channel Mosfet Transistor • FEATURES • Drain Current -ID= 7A@ TC=25°C • Drain Source Voltage: VDSS= 600V(Min) • Static Drain-Source On-Resistance

D-12

Abstract: IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

D-12

Abstract: IRGBC30F
Contextual Info: PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V

IRGBC30F

Abstract: D-12 IRGBC30
Contextual Info: PD - 9.689A IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.1V

GC 380

Abstract: D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

IRGPC40F

Contextual Info: PD - 9.693A IRGPC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

C6610

Abstract: GC 380 D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UGP7N60 Preliminary Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UGP7N60 is an N-channel IGBT. it uses UTC’s advanced technology to provide customers with high input impedance, high switching speed and low conduction loss, etc.

IC C399

Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

APT30GF60BN

Abstract: 1256C 2Q150
Contextual Info: ADVANCED POWER TECHNOLOGY b lE 0 25 7 *5 CH 0 0 0 0 0 7 4 D A 4*57 IAVP d v a n c e d Pow er T e c h n o lo g y 0 APT30GF60BN 600V 30A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,