APT30GF60BN Search Results

Contextual Info: A D VA NC ED POIilER TECHNOLOGY b lE □257^0^ D DQDGÔ74 4*i7 *A V P A dvanced P o w er Te c h n o l o g y APT30GF60BN 600V 30A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT30GF60BN

Abstract: APT30GF60BNU1
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT30GF60BNU1 600V 30A WER MOS IV IGBÏ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST PARALLEL DIODE M A X IM U M R A TIN G S Symbol VcE S All Ratings: T c = 25°C unless otherwise specified.

APT30GF60BN

Abstract: 1256C 2Q150
Contextual Info: ADVANCED POWER TECHNOLOGY b lE 0 25 7 *5 CH 0 0 0 0 0 7 4 D A 4*57 IAVP d v a n c e d Pow er T e c h n o lo g y 0 APT30GF60BN 600V 30A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

APT POWER FET

Abstract: APT110GF60JN APT65GL100BN APT25GF100BN APT30GF60BN APT45GL100BN IGBT SCHEMATIC IGBT 1500 volts APT35GL60BN IGBT 1000 VOLTS TO 1500 VOLTS
Contextual Info: APT IGBT PRODUCTS BVces V ce ON lc,(25C ) lC2(90°C) tf(IND@125 C) Pd APT New Product Volts Volts Amps Amps nsec Watts Part No. Comments LOW CONDUCTION LOSS IGBT PRODUCT FAMILY 1000 2.8 3.0 3.0 65 45 30 35 25 17 1500 1500 1500 260 200 147 APT65GL100BN APT45GL100BN