TRANSISTOR 60 12W Search Results

20 watts transistor s-band

Abstract: j948
Contextual Info: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

2731GN-200M

Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

j521

Contextual Info: 3135GN-170M Rev 2 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

2731GN

Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO Pin : R F IN P U T V C C I : 1s t. DC S U P P L Y ®VBB : BA SE B IA S S U P P L Y @ V C C 2 : 2 n d . DC S U P P L Y ®PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)

Contextual Info: ^24^62^ DD1 7 2 6 3 547 • MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO BLOCK DIAGRAM 1 . œHh PIN : P in RF INPUT Vcci 1st. DC SUPPLY <$VBB BASE BIAS SUPPLY ®VCC2 2nd. DC SUPPLY ®Po RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS 0 0 = 2 5 ^ unless otherwise noted

P04 transistor

Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters
Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted

transistor 12w

Abstract: M57789
Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted

a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

transistor+SMD+12W+MOSFET

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

TA7274P

Abstract: Gv54 R2RF N2420 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: TOSHIBA -, ELECTRONIC OE 90 9 7 2 4 7 TOSHIBA. T TDT7SM7 ÜQ170G3 b ELECTRONIC 02E 12W BTL AUDIO POWER AMPLIFIER Unit in mm The TA7274P is audio power amplifier for consumer application. This IC is applying BTL system in which output couppling condenser and bootstrap condenser are

transistor 12w

Abstract: PH1214-12M
Contextual Info: PH1214-12M Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: PH1214-12M Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

RF condenser

Abstract: 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM TA7274P 02-2AF
Contextual Info: TOSHIBA-, E L E C T R O N I C 9097247 TOSHIBA. 1 OB ÏT"| Ì C H 7 5 M 7 Ü D 1 7 0 G 3 b ELECTRONIC 02E 12W BTL AUDIO POWER AMPLIFIER Unit in mm The TA7274P is audio power amplifier for consumer application. This IC is applying BTL system in which output

SLD2083CZ

Abstract: j20 Schematic thermistor 100k SLD-2083 01UF 10UF SLD-2083CZ j20 all Schematic RF083 CONNECTOR SMA 905 drawing
Contextual Info: SLD-2083CZ SLD-2083CZ 12Watt Discrete LDMOS FET in Ceramic Package 12WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features RFMD’s SLD-2083CZ is a robust 12Watt high performance LDMOS transistor designed for operation to 1600MHz, It is an excellent solution for

TFK 082

Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications

AP3970P-G1

Abstract: 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3968 AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS
Contextual Info: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3968/69/70/70S consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 12W output power. Typical applications

TDA2030

Abstract: TDA2030 pin layout how to test tda2030 TDA2030 equivalent amplifier circuit tda2030 tda2030 pin configuration tda2030 bridge configuration tda2030 bridge tda2030 data LAYOUT TDA2030
Contextual Info: TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power d = 0.5% at 14V/4Ω; at ± 14V the guaranteed output power is 12W on a 4Ω load

Contextual Info: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage