TRANSISTOR 6 MHZ Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic

transistor Y2

Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Contextual Info: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 2 — 11 April 2013 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

Transistor lm 358

Abstract: lm 358 ic BC449
Contextual Info: CRO DESCRIPTION BC449 NPN SILICON TRANSISTOR 0 4 .6 8 T O -92 F 0 .1 8 [ BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 3.58 (0.14) (0 . 18 ) r~

3F2 SMD Transistor

Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor

BC449

Abstract: Bc449 transistor
Contextual Info: BC449 NPN SILICON TRANSISTOR DESCRIPTION 04.68 0.18 BC449 is NPN silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. 4*6 (0.18) TO-92F -I— I- - 0.4 E B c \_ [(0 .0 1 6 )

MBB264

Abstract: BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor

1417 transistor

Abstract: max 1417 1417-6A
Contextual Info: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications

2224-6L

Contextual Info: 2224-6L 6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz GENERAL DESCRIPTION The 2224-6L is a COMMON BASE transistor capable of providing 6 Watts, Class C output power over the band 2200-2400 MHz. The transistor includes input prematching for full Broadband capability. Gold metalization and

BFG94

Abstract: MBB780 TRANSISTOR HANDBOOK MBB788
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain

transistor Y4

Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
Contextual Info: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain

Transistor BFr 99

Contextual Info: DISCRETE SEMICONDUCTORS BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 Philips Sem iconductors 1997 Oct 29 PHILIPS Philips Semiconductors Product specification NPN 6 GHz wideband transistor

PTB 20181

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power

transistor g4c

Contextual Info: S G S-THOMSON G4C D 1 :7^2*1237 ODOOGSH 4 SOLID STATE MICROW AVE SD1409 THOMSON-CSF COMPONENTS CORPORATION ; M ontgom eryvH ie, P A 1 8 9 3 6 • {2 1 5 3 6 2 -8 5 0 0 ■ TW X 5 1 0 -6 6 1 -7 2 9 9 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1409 transistor is a common base silicon epitaxial planar transis­

Contextual Info: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at

Contextual Info: ERICSSON PTB 20051 6 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20051 is a class A, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14651513 MHz frequency band. It is rated at 6 Watts minimum

BFG94

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.

PTB20144

Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • The 20144 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output

FMBA0656

Abstract: transistor marking E2 Supersot 6 transistor marking c1
Contextual Info: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP