TRANSISTOR 5C P Search Results

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration

Contextual Info: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking CMBT4124 = 5C 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _K02 0.89* 0.60 0.40 2.00_ 1.80 ABSOLUTE MAXIMUM RATINGS

smd transistor 5c sot-23

Abstract: SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

transistor marking ST4

Abstract: nun 116 CMBT4124
Contextual Info: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PACKAGE OUTLINE DETAILS CMBT"S24 = 5C ALL DIMENSIONS IN mm 0.14 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE M A XIM UM RATIN GS C ollector-base voltage open em itter C ollector-em itter voltage (open base)

marking A1 TRANSISTOR

Abstract: 35-e 20v marking 5b BC807-16W BC817W
Contextual Info: BC807-16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente FEATURES z z z Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MARKING 16W:5A; 25W:5B; 40W:5C PACKAGE DIMENSIONS

2SC3040

Contextual Info: Ordering number: EN 997B _ 2SC3040 NPN Triple Diffused Planar Silicon Transistor 400V/8A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute M a x i m a Ratings at T a = 2 5C

SC 9153

Abstract: 2SB888
Contextual Info: Ordering number: EN 9 1 5C 2SB888 N0.915C PNP Epitaxial Planar Silicon Darlington Transistor SAXYO i Driver Applications Applications . Motor drivers, printer h a m m e r drivers, relay drivers, voltage regulator control Features . High DC current gain 5000 or greater .

transistor Bf 979

Abstract: pnp vhf transistor
Contextual Info: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .

smd transistor 5c sot-23

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2

5g smd transistor

Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

smd 5H transistor

Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H

DTA143

Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Contextual Info: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO

BC807-16

Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Contextual Info: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage

CMBT4124

Contextual Info: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m M arking CMBT4124 = 5C _3.0_ 2.8 0.14 0.48 0.38 -^ p T 0 9 0.70 0.50 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 1.4 1.2

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48

8C808

Abstract: bc807 BC808-25 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-40 BC807 5C
Contextual Info: BC807 BC808 CDÎL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m 3.0 0.14

TRANSISTOR TCD 100

Abstract: 3n123 teledyne transistor Transistor Bo 17 BU100
Contextual Info: TELEDYNE COMPONENTS EflE D • ûW bOa □GGt.5cì3 1 M LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR G E O M E T R Y 45Q ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G PARAM ETER SYM BO L 3N123 U N IT S Collector to Base Voltage

Contextual Info: FMW10 h 7 > y ^ ^ / T ransistors FMW10 Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor so>4V;Vvfn- • 1M & \f;£ 0 /D im e n s io n s Unit : mm 1) 7 , - n 2 (0 <T) 7 5>3t >?1£*5c £ nri'-So 2) 2(@<7) h 7 > y X ! > C D tS ttA 'f -5 77 T

Contextual Info: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F

ST-RA225S

Abstract: 12v6
Contextual Info: ST-RA221S…RA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process OUT R1 IN R2 COMMON +

MMBTRA226S

Contextual Info: MMBTRA221S…MMBTRA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process High Output Current: -800mA

Contextual Info: DATA SHEET PHOTOCOUPLER PS2805C-1,PS2805C-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2805C-1 and PS2805C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.