TRANSISTOR 546 Search Results

NEC 2905

Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

5463003

Abstract: sot223 device Marking SB29003
Contextual Info: SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage

5463003

Abstract: 54630 SB29003 sot223 device Marking
Contextual Info: SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

2sc4571

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

SN 4931

Abstract: 2sc 3476 2SC 1885 SN 4931 N
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

TRANSISTOR SMD MARKING CODE DK

Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

Contextual Info: NPN SILICON TRANSISTOR 2N3019CSM • High Voltage, High Current Small Signal NPN Transistor. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available

MJE15020

Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.