DTC114TE
Abstract: SMD310 motorola DTC114TE
Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
|
Original
|
DTC114TE/D
DTC114TE
416/SC
DTC114TE/D*
DTC114TE
SMD310
motorola DTC114TE
|
PDF
|
DTC114YE
Abstract: SMD310 motorola DTC114YE
Contextual Info: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a
|
Original
|
DTC114YE/D
DTC114YE
416/SC
DTC114YE/D*
DTC114YE
SMD310
motorola DTC114YE
|
PDF
|
DTA143EE
Abstract: SMD310 43 DTA143EE
Contextual Info: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
|
Original
|
DTA143EE/D
DTA143EE
416/SC
DTA143EE/D*
DTA143EE
SMD310
43 DTA143EE
|
PDF
|
DTA114YE
Abstract: SMD310
Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
|
Original
|
DTA114YE/D
DTA114YE
416/SC
DTA114YE/D*
DTA114YE
SMD310
|
PDF
|
M54523
Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
|
Original
|
M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
M54523
pnp 8 transistor array
18P4G
20P2N-A
M54583
8 pin 4v power supply ic
|
PDF
|
M54583FP
Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
|
Original
|
M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
pnp darlington array
M54523
PNP DARLINGTON ARRAYS
18P4G
20P2N-A
M54583
pnp 8 transistor array
|
PDF
|
NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
|
OCR Scan
|
2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
|
PDF
|
nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
|
Original
|
2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
|
PDF
|
ZO 107 MA
Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
2SC5009
2SC5009
ZO 107 MA
341S
|
PDF
|
ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
|
Original
|
2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
|
PDF
|
TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
|
OCR Scan
|
2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
|
PDF
|
IC SEM 2105
Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
|
OCR Scan
|
2SC5008
2SC5008
IC SEM 2105
3771 nec
|
PDF
|
928 606 402 00
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
2SC5008
2SC5008
928 606 402 00
|
PDF
|
2n5449
Abstract: 2N5450
Contextual Info: 2 N 5449 • 2 N 5450 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Besondere Merkmale: • Verlustleistung 360 m W Features: • Power dissipation 360 m W
|
OCR Scan
|
|
PDF
|
|
|
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
|
Original
|
REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
|
PDF
|
2N5450
Abstract: 2N5449 MH 5450 S transistor 2n
Contextual Info: 2I\I 5449 2N 5450 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , P LA N A R E P IT A X IA L 'iompl. of 2N 5447 and 2N 5448 51s Preferred device Dispositif recommandé Driver stages and power stage« in AF amplifiers Etages "Drivers" et de puissance pour
|
OCR Scan
|
CB-76
100mA
2N5450
2N5449
MH 5450 S
transistor 2n
|
PDF
|
nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
|
Original
|
2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
|
PDF
|
transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
|
OCR Scan
|
2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
|
PDF
|
NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
|
Original
|
2SC4954
2SC4954-T1
NEC 2581
nec 258
2581 NEC
574 nec
2SC4954
2SC4954-T1
2SC4954-T2
26480
30460
NEC 821
|
PDF
|
MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
|
Original
|
MGW20N120/D
MGW20N120
MGW20N120/D*
TransistorMGW20N120/D
MGW20N120
transistor d 1557
305 Power Mosfet MOTOROLA
|
PDF
|
transistor motorola 236
Abstract: MGY25N120
Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
|
Original
|
MGY25N120/D
MGY25N120
MGY25N120/D*
transistor motorola 236
MGY25N120
|
PDF
|
305 Power Mosfet MOTOROLA
Abstract: Transistor motorola 418 MGW30N60
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
|
Original
|
MGW30N60/D
MGW30N60
MGW30N60/D*
305 Power Mosfet MOTOROLA
Transistor motorola 418
MGW30N60
|
PDF
|
NEC 2581
Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
|
Original
|
2SC4954
2SC4954-T2
2SC4954-T1
NEC 2581
nec 2405
2581 NEC
zo 103 ma 75 607
30460
pulse 01940
9590
IC 2030 PIN CONNECTIONS
5598 transistor
2SC4954-T1
|
PDF
|
PZTA42T1
Abstract: SMD310 marking P1D pd 223 circuit
Contextual Info: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3
|
Original
|
PZTA42T1/D
PZTA42T1
PZTA42T1/D*
PZTA42T1
SMD310
marking P1D
pd 223 circuit
|
PDF
|
