TRANSISTOR 5343 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V

5343 transistor

Abstract: 2SA1980M 2SC5343M transistor 5343
Contextual Info: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information

5343 transistor

Contextual Info: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information

SIPC03N60S5

Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5

SIPC03N60S5

Contextual Info: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5

5343 transistor

Abstract: 2SC5343M 2SA1980M transistor 5343
Contextual Info: 2SC5343M NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features B C E • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M TO-92M

BUK954R4-40B

Abstract: BUK964R4-40B BUK9E4R4-40B S1021 S 12051
Contextual Info: BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

Contextual Info: microseui corp/power 27E D • tillSTSQ ÜDDGS31 T ■ PTC T -33-/3, TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 ps Planar Epitaxial Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils Applications:

transistor 5609

Abstract: 5609 5609 transistor MJ411 CCC411 MJ410
Contextual Info: 6115950 M ÌCROSEMI CORP/POWER 0 2E DE DE IhllSTSO 00502 DDODSGa 3 D 7- J . CCC411 3.5 A, 300 V, NPN Power Transistor Chip •Triple Diffused, Glass Passivated Mesa TECHNOLOGY .150" 3.8mm ■Contact Metallization: Base and emitter-aluminum Collector (Al-Ti-Ni-Au)

LM567 application note

Abstract: LM567 application LM567 lm567cn data IC LM567 lm567 schematic diagram RETS567X touch-tone decoder 05fo LM567CN
Contextual Info: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage

Contextual Info: 6115950 MICROSEMI C OR P/ PO WER oa Q2E 00522 D I - CCC2400 i»rr « T TECHNOLOGY 50 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au ■ Assembly Recommendations:

LM567

Abstract: IC LM567 LM567 application note A 673 C2 transistor LM567 datasheet lm567 schematic diagram LM567CN datasheet LM567 lm567 applications LM567C
Contextual Info: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage

Contextual Info: '6115950 MICROSEMI CORP/ POWER 02E 'oh D T '3 3 - Z ? 00519 D lf| b l l i ^ S D QDOOSn CCC10023 'P T C TECHNOLOGY 40 A, 600 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum

RETS567X

Abstract: IC LM567 LM567 PLL LM567CH lm567
Contextual Info: LM567/LM567C October 13, 2011 Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage

photo sensor s4810

Contextual Info: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.

photo sensor s4810

Contextual Info: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.

S4810

Abstract: S6289 photo sensor s4810
Contextual Info: PHOTO IC Low-voltage operation photo IC S4810, S6289 Operation at low voltage from 2.2 V S4810 and S6289 are digital output photo ICs consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.

TO-204aa MICROSEMI PACKAGE OUTLINE

Abstract: Solenoid Drivers high voltage fast switching npn transistor 5609 transistor PTC16018 "Solenoid Drivers" 16018
Contextual Info: bllSTSO 00D045t. 2 I ' T - 3 3 ,'IS D PTC 16018 1.5KV Powermode Transistor i: 'i- ' " ' i r L* ' ' - ’ ’r • •• i S ' i: - " .- • - FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 1500 Volts High Current Rating 10 Amperes

S4810

Abstract: hl 05
Contextual Info: Low-voltage operation photo IC S4810-100 Operation at low voltage from 2.2 V The S4810-100 is a digital output photo IC consisting of a photodiode, schmitt trigger circuit and output transistor, all integrated on a single chip and molded into a visible-cut, subminiature plastic package.

5609

Abstract: 5609 transistor TSA55565
Contextual Info: m M5E i> bllSISO 00G0552 S7M « P T C MICROSEMI CORP/POUER TSA55565 Power Transistor Chip, NPN 55 A, 650 V, tf = 0.1 jis • Planar Epitaxial ■ Coniaci Metallization: ■ Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils M Applications:

Contextual Info: TSB504100 Power Transistor Chip, NPN 4 A, 1000 V, tf = 40 ns TECHNOLOGY • Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils ■ Applications: 126 mil "B'BASB BONDING AREA: ■B'EMITTER SONDINO ARBA¡ 16 *33 mil»

Contextual Info: 2SC5343M NPN Silicon Transistor Description PIN Connection • General sm all signal am plifier Features B C E • Low collect or sat urat ion volt age : VCE sat = 0.25V( Max.) • Low out put capacit ance : Cob = 2pF( Typ.) • Com plem ent ary pair wit h 2SA1980M

Contextual Info: 6115950 MICROSEMI 02E 00 51 7 CORP/POWER DE I □E ^115^50 D -T-3 3 - 2 9 □□□□517 CCC10021 TPXC TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated n ■ Contact Metallization: Base and emitter-aluminum