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5609 Abstract: 5609 transistor TSA55565 Contextual Info: m M5E i> bllSISO 00G0552 S7M « P T C MICROSEMI CORP/POUER TSA55565 Power Transistor Chip, NPN 55 A, 650 V, tf = 0.1 jis • Planar Epitaxial ■ Coniaci Metallization: ■ Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils M Applications:	OCR Scan	00g0552 tsa55565 5609 5609 transistor	PDF

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5609

Abstract: 5609 transistor TSA55565
Contextual Info: m M5E i> bllSISO 00G0552 S7M « P T C MICROSEMI CORP/POUER TSA55565 Power Transistor Chip, NPN 55 A, 650 V, tf = 0.1 jis • Planar Epitaxial ■ Coniaci Metallization: ■ Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils M Applications:

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00g0552 tsa55565 5609 5609 transistor

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