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    TRANSISTOR 5331 Search Results

    TRANSISTOR 5331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 5331 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR SMD CODE 15

    Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
    Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:


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    2sd669xd/2sd669axdo-252mil-std-202g2sd669xd+112sd669axdtransistor smd code 15smd code transistortransistor smd npn acsmd transistor code 14smd transistor 14transistor smd wtransistor smd wusmd transistor sasmd transistor2sd669a PDF

    JANTX2N4405

    Contextual Info: ISCFdÈ„c ö„c ö text/html About News Contact keyword search: Employment Site Home part number search: JANTX2N4405 #53312 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi


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    jantx2n4405 PDF

    2N4405

    Contextual Info: ISCFdÈÍ &ÖÍ™&Ö text/html About News Contact keyword search: Employment Site Home part number search: 2N4405 #53310 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi PPG Webex Portal


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    2n4405 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    hmxr-500113001 yf 09 transistorhp 5082 70005082-0825+633150a2n6838hxtr 3101hxtr 3101 transistor5082-2815hsch-1001 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    T1600GB45G

    Abstract: T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
    Contextual Info: WESTCODE An Date:- 3 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    t1600gb45gt1600ic 7418 datasheettransistor polar+4d-68623ixys application noteigbt 3 katransistor 1ge PDF

    SC1453

    Abstract: SC1453ITSK285TR marking j9 sot-23
    Contextual Info: SC1453 NOT RECOMMENDED FOR NEW DESIGN 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows


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    sc1453150mamo-193tsot-23-5+2sc1453itsk285trmarking j9 sot-23 PDF

    SC1453

    Abstract: SC1453ISK285TRT SC1453ISK-XXXTR SC1453ISK-XXXTRT vishay TRANSISTOR Sot-23-5 MARKING CODE sot-23 MARKING CODE j3
    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    sc1453150mamo-193tsot-23-5+5sc1453isk285trtsc1453isk-xxxtrsc1453isk-xxxtrtvishay transistor sot-23-5 marking codesot-23 marking code j3 PDF

    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    150masc1453ot-23-5tsot-23-5 PDF

    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    150masc1453 PDF

    MARKING MON sot-23

    Abstract: SC1453 SC1453ISK18TRT SC1453ITSK28TRT
    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    sc1453150mamo-193tsot-23-5+3marking mon sot-23sc1453isk18trtsc1453itsk28trt PDF

    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    150masc1453 PDF

    marking j9 sot-23

    Abstract: capacitor 100nF 1uF
    Contextual Info: SC1453 150mA Ultra Low Dropout Regulator with Low Noise Bypass POWER MANAGEMENT Description Features The SC1453 is a low dropout linear regulator that operates from a +2.25V to +6.5V input range and delivers up to 150mA. A PMOS pass transistor allows the low 75µA supply current to remain independent of


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    150masc1453ot-23-5tsot-23-5+2marking j9 sot-23capacitor 100nf 1uf PDF

    Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48576109pd48576118576m-bit864-word+1r10ds0064ej0200 PDF

    Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48288109apd48288118a288m-bit432-word+2216-wordr10ds0098ej0100 PDF

    Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48288109apd48288118a288m-bit432-word+2216-wordr10ds0098ej0200 PDF

    Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48288109apd48288118a288m-bit432-word+2216-wordr10ds0098ej0300 PDF

    Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48576109pd48576118576m-bit864-word+1r10ds0064ej0300 PDF

    PD48576109,

    Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48576109pd48576118576m-bit864-word+1r10ds0064ej0100 PDF

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Contextual Info: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    pd48576109-apd48576118-ar10ds0064ej0001864-word+3ba1 k11ba1d1apd48576118ff-e24-dw1-a PDF

    Contextual Info: 38 75 08 1 G E S O L I D ST AT E 0 1E 19658 Optoelectronic Specifications_ T '4 -l-k HARRIS SEMICOND SECTOR Light Detector 37E D B 4 3 0 2 2 7 1 DQ2712D 7 • HAS Planar Silicon Photo Transistor The G E Solid State L14C1 and L14C2 are NPN Silicon Phototransistors in a TO-18 style


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    dq2712dl14c1l14c292cs-42662+192cs-429s1 PDF

    Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V


    OCR Scan
    mmbt2369bc818-16bc818500ma+4100ma100mhzbc846abc848b PDF

    wabash relay

    Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
    Contextual Info: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:


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    e1420be1420-68006wabash relay1820-3145+81826-0346rohm op amptkf 281826-0180caddell-burns manufacturinge14205053hd619k0fgrm3195c1h102jd01d PDF

    EASY820-DC-RC

    Abstract: EASY619-DC-RC EASY819-DC-RC EASY819-AC-RC moeller EASY822-DC-TC EASY619-AC-RC MFD-RA17 MANUAL EASY-412-DC-R EASY-412-AC-R EASY819-DC-RC moeller
    Contextual Info: i04_000_a_g.fm Seite 0 Freitag, 21. März 2003 3:52 15 4/0 EASY control relay EASY control relay Moeller HPL0211-2003/2004 i04_001_a_g.fm Seite 1 Freitag, 21. März 2003 10:20 10 Moeller HPL0211-2003/2004 4/1 Contents EASY control relay ESC ALT OK System overview


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    hpl0211-2003/2004easy800awb2528-1304-dawb2528-1304-gb+15awb2528-1304-fawb2528-1304-iawb2528-1304-eawb2528-1423dawb2528-1423gbeasy820-dc-rceasy619-dc-rceasy819-dc-rceasy819-ac-rc moellereasy822-dc-tceasy619-ac-rcmfd-ra17 manualeasy-412-dc-reasy-412-ac-reasy819-dc-rc moeller PDF