TRANSISTOR 5010 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

R T O BH TRANSISTOR

Abstract: 2SC5168 transistor CR NPN
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.

transistor 1012 TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

TIP41C

Abstract: TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO-220 The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES 1 TO - 252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

2SB1132G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION

2SA1927

Abstract: 05SV ra-100
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

TIP41CL

Abstract: TIP41CL-TA3-T f tip42c TIP41C tip41c pins TIP42C
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 TO-220 FEATURE * Complement to TIP42C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR  DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION

2SB1132

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

trr 30-06xx2

Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
Contextual Info: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex

TRR25-10XX2

Abstract: TRR 100-12xx2 transistor c282 trr 30-06xx2 TRANSISTOR BIPOLAIRE 75-10xx2 06XX2 50-10XX2 5012-X ISOLA DE 156
Contextual Info: A S E A B R Oü JN /AB B □□40300 S.ENICOÎ' □□□□SOS Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren mit 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes 1 J V - 5 3 ' o I Transistor Type/Type ATRR ATRR

JC5010

Abstract: JC501 JC501Q JC501P JC501Q transistor npn, transistor, sc 115 c TRANSISTOR K 135 J 50 through hole transistor 115
Contextual Info: DISCRETE SEMICONDUCTORS JC501 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 17 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor

MMBTA06G

Abstract: MMBTA06L-AE3-R MMBTA06 MMBTA06-AE3-R MMBTA06L transistor marking CS
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW Lead-free: MMBTA06L Halogen-free:MMBTA06G „ ORDERING INFORMATION Normal MMBTA06-AE3-R „

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage:

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

MMBTA05

Abstract: MMBTA06 MMBTA06-AE3-R MMBTA06L MMBTA06L-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA06L ORDERING INFORMATION Order Number Normal