TRANSISTOR 468 Search Results

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

d2625

Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
Contextual Info: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes

ST DARLINGTON TRANSISTOR

Abstract: ULN2003 hfe 1976 Darlington pair IC single
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V

RN1108F

Abstract: RN2105F RN49A1
Contextual Info: RN49A1 TOSHIBA Transistor Silicon PNP•NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (6 pin)

Contextual Info: RN49A1 TOSHIBA Transistor Silicon PNP•NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (6 pin)

NEC 7924

Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1

darlington pair transistor

Abstract: SN75469 EQUIVALENT DARLINGTON ARRAYS npn darlington array Darlington pair IC schematic 1N3064 SN75468 SN75469 ULN2003A ULN2004A
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B – DECEMBER 1976 – REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

ULN2003

Abstract: 100VVCE
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current Single D D D D D SN75468 . . . D, N, OR NS PACKAGE SN75469 . . . D OR N PACKAGE

Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current Single D D D D D SN75468 . . . D, N, OR NS PACKAGE SN75469 . . . D OR N PACKAGE

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

SN75468

Abstract: SN75468D SN75468DR SN75468N SN75468NSR SN75469 SN75469N ULN2003A ULN2004A cmos open collector
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current Single D D D D D SN75468 . . . D, N, OR NS PACKAGE SN75469 . . . D OR N PACKAGE

SN75468

Abstract: Darlington pair IC schematic ULN2003 SN75468D SN75468DR SN75468N SN75468NSR SN75469 SN75469N ULN2003A
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023D − DECEMBER 1976 − REVISED NOVEMBER 2004 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D 500-mA Rated Collector Current Single D D D D D SN75468 . . . D, N, OR NS PACKAGE SN75469 . . . D OR N PACKAGE

nec 3012

Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

transistor zo 107

Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

TI 9023 IC data

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor