TRANSISTOR 436 Search Results

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

MCD628

Abstract: LTE21015R SC15 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS DDQOms 3 MTD6040 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD R E A D E R S • VELOCITY SE N SO R FEATURES • High sensitivity: l|_=250/<A Typ. .

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

8D438

Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary

Contextual Info: PHOTO TRANSISTOR lflE D MARKTECH INTERNATIONAL STITtiSS QQQD40Ô 1 T-MI-W MTD6010A SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P T IC A L SW IT C H • TAPE, C A R D R E A D E R S 1. E M IT T E R 2. C O L L E C T O R

BD436 cross reference

Abstract: IC 0247
Contextual Info: BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications • Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

BF320

Abstract: transistor Bf 981 START540 START540TR 158E-1 transistor BF 506
Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

transistor Bf 981

Abstract: START540 START540TR BF320 SPECTRE MODEL transistor bf 968
Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

Contextual Info: MARKTECH INTERNATIONAL 571^55 1ÔE D DGGQ527 1 PHOTO IC COUPLER T -4 1 - S 3 MT6500, MT6510 Unit in mm inches APPLICATIONS • • • • • DIGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR

2N2484UA

Abstract: 2N2484UB 2N2484 MIL-PRF19500 2N2484 JANTX
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 November 2000. INCH-POUND MIL-PRF-19500/376E 31 August 2000 SUPERSEDING MIL-PRF-19500/376D 21 August 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

Contextual Info: STTTbSS 0G0G424 T SLOTTED SWITCH 1ÛE D MARKTECH INTERNATIONAL MTSS8050 INFRARED LED+PHOTO TRANSISTOR • R s I J- APPLICATIONS •J t — • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR t • L l i J — -, , ■ FEATURES " TTp j RATING UNIT Forward Current

Contextual Info: Die Datasheet Normally – OFF Silicon Carbide Junction Transistor GA20JT06-CAL VDS RDS ON ID (Tc = 25°C) hFE(Tc = 25°C) = = = = 600 V 65 mΩ 45 A 110 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch

Contextual Info: GA20JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 60 mΩ 45 A 80 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area

2n2222 spice model

Contextual Info: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate

BSP124

Abstract: MRC224 MTT 65 A 12 N depletion mode TRANSISTOR 436 Depletion
Contextual Info: Philips Semiconductors • 711Q6Eb Q Q b 7 fl 0 L 6H3 M PH I N Jroduct specification N-channel depletion mode vertical D-MOS transistor BSP124 QUICK REFERENCE DATA FEATURES PARAMETER MIN. MAX. UNIT - 250 V - 250 mA - 1.5 W open drain - 20 V lD = 20 mA; VGS = 0

P8N50

Abstract: SMP8N50
Contextual Info: SILXCONXX INC lflE D A 5 S 4 7 3 S 0 D 1 4 C145 E • SMP8N50 C T S ilîc o n ix JL m ■ in c o rp o ra te d T-3PI- \ 3 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BR|DSS >D (A 0.85 500 8.0 1 GATE 2 DRAIN (Connected to TAB)