TRANSISTOR 406 SPECIFICATION Search Results

Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

J294

Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

100 CJB

Abstract: TIP120
Contextual Info: TIP120 TO-220 DARLING TRANSISTOR NPN FEATURES * Power application TO-220 .114 (2.89) .102 (2.59) MECHANICAL DATA * * * * .184 (4.67) .155 (3.94) .147 (3.74) .406 (10.31) .394 (10.01) .176 (4.47) .054 (1.37) .046 (1.17) Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
Contextual Info: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

j130 fet

Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
Contextual Info: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

1000uf electrolytic capacitor

Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
Contextual Info: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

8059-2G7

Abstract: s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2
Contextual Info: 8059 Series Transistor & IC Low Profile Sockets 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve. Insulators are molded in five brilliant polyamide colors, for rapid visual

in 3003 TRANSISTOR

Abstract: Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor & IC Low Profile Sockets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium

Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

transistor 373

Abstract: 8060 transistor
Contextual Info: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe

8060 transistor

Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,

transistor 1kp

Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS

690 lc

Abstract: BUW14
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU27250F GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VC6S pulses up to 1700V.

Contextual Info: AMP Catalog 1307612 Specialty Sockets Revised 7-01 T ran s isto r & 1C Low Profile S o ckets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCËS pulses up to 1700V.

transistor Kd 505

Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6
Contextual Info: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:

BUK457-600B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK457-600B

Abstract: T0220AB
Contextual Info: bTE T> • N AMER PHILIPS/DISCRETE bt.S3 T 31 0 03 0 7 1D DBS ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance