TRANSISTOR 406 SPECIFICATION Search Results

Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

J294

Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W
Contextual Info: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of

100 CJB

Abstract: TIP120
Contextual Info: TIP120 TO-220 DARLING TRANSISTOR NPN FEATURES * Power application TO-220 .114 (2.89) .102 (2.59) MECHANICAL DATA * * * * .184 (4.67) .155 (3.94) .147 (3.74) .406 (10.31) .394 (10.01) .176 (4.47) .054 (1.37) .046 (1.17) Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

SIT Static Induction Transistor

Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M
Contextual Info: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

static induction transistor SIT

Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
Contextual Info: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON

electrolytic capacitor, .1uF

Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor
Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

Contextual Info: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION

8059-2G7

Abstract: s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2
Contextual Info: 8059 Series Transistor & IC Low Profile Sockets 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve. Insulators are molded in five brilliant polyamide colors, for rapid visual

in 3003 TRANSISTOR

Abstract: Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor & IC Low Profile Sockets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium

Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

SMD transistor UY

Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)

transistor 373

Abstract: 8060 transistor
Contextual Info: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe

690 lc

Abstract: BUW14
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

Contextual Info: AMP Catalog 1307612 Specialty Sockets Revised 7-01 T ran s isto r & 1C Low Profile S o ckets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve.

transistor Kd 505

Abstract: k534 TRANSISTOR D410 transistor DA 218 b058 8060 transistor 805S-IG32 1G22 1G5.1 8060-1G6
Contextual Info: TH IS DRAW ING IS A C O N TR O LLE D DO C U M EN T. REVISIONS T ^ st DATE - p 0 0 28N0V2006 ECO — 05 — Ö9 78 8058 & 8060 Series DWN APVD Kb i/ n d e s c r ip t io n L J Transisto r Sockets 8060-1G11 8060-1G6 FEATURES: — 1^ PERFORMANCE SPECIFICATIONS:

BUK457-600B

Abstract: T0220AB
Contextual Info: bTE T> • N AMER PHILIPS/DISCRETE bt.S3 T 31 0 03 0 7 1D DBS ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance

BUK457-600B

Contextual Info: PHILIPS INTERNATIONAL fc,5E D m 7110fl2fe. O O b m M b IbB • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER P H IL IP S /D IS C R E T E bRE D • b b 5 3 R 31 Philips Sem iconductors D 0 3 0 7 1 D 035 H A P X Product Specification BUK457-600B Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a

Contextual Info: DPF80 DUAL RATE/TOTALIZER Two Separate Ratemeters, Totalizers With Combination Function MADE IN USA ߜ Displays A, B, & C Rate & A, B, &C Total ߜ Separate Scaling Factors For A & B Inputs ߜ C Displays A+B, A-B, A÷B, & A÷ (A+B) ߜ Pulse Input10kHz Max.

Philips 4N26

Contextual Info: 4N25 4N25A 4N26 4N27 4N28 ÖUALITY TECHNOLOGIES CORP S 7E D • 74 bbfl51 G 004753 TTb «flTY ' S Ä ¿ É Ê V -VI-Î3 1- 1 OPTOCOUPLERS This product range is one of the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply with the specifications of the main part of the

ZENER DIODE z91

Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Contextual Info: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.

HIIAA

Abstract: 4 n 608 608 diode optoelectronic ic ge h11a
Contextual Info: G E SOLI » STATE □i »E|3a?5oai Dont^fl Optoelectronic Specification* T-V/-53 A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State H11A A 1 — H 11A A4 consist of two gallium arsenide infrared emitting