TRANSISTOR 400V Search Results

transistor SOT23 4d

Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching

TO-92 VCEO400V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number

Contextual Info: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch

PZTA94G-AA3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number

transistor SOT23 4d

Abstract: pnp transistor 300v sot23 pnp low saturation transistor sot23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC MAX =350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 *Telephone switching

Contextual Info: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92

Contextual Info: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

Contextual Info: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92

Contextual Info: Ordering number: EN 3512B _ 2SA1786/2SC4646 2SA1786:PNP Epitaxial Planar Silicon Transistor 2SC4646:NFN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic = 2A • High breakdown voltage (Vceo = 400V)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: * VCEO=400V UTC MPSA44 * VCEO=350V (UTC MPSA45) * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to

transistor on 4409

Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA44HL-AB3-R MPSA44HG-AB3-R

transistor discontinued

Abstract: transistor KSP44 KSP44 KSP45 kst45
Contextual Info: KSP44/45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=KSP44: 400V KSP45: 350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector Base Voltage : KST44

DSA00204679

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA „ ORDERING INFORMATION Normal MPSA44H-AB3-R MPSA44H-T92-R MPSA44H-T92-K Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage:* VCEO=400V * Collector Current up to 300mA „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA44HL-AB3-R MPSA44HG-AB3-R

mje13005d

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,

UTC 379

Abstract: mje13005d transistor MJE13005D ELECTRONIC BALLAST transistor DIAGRAM MJE13005DL-T60-T to-126 npn switching transistor 400v NPN 2A TO 126 MJE13005-D
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,

mje13005d

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,

Contextual Info: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

Contextual Info: UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V PZTA44 VCEO=350V(PZTA45) *Collector current up to 300mA *Complement to PZTA94/93 *Collector Dissipation: Pc(max)=2W 1 2 3 4 APPLICATION

mpsa45 transistor

Abstract: MPSA44
Contextual Info: UTC MPSA 44/ 45 TRANSISTOR NPN EPITAXIAL SILICON HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching