TRANSISTOR 390 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 PNP SILICON TRANSISTOR LOW VCE SAT  TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

FC155

Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

FC155

Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one

2SB1424

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1424 Preliminary LOW VCE SAT „ PNP SILICON TRANSISTOR TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage).

transistor marking 1y

Abstract: HB573
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

3904 npn

Abstract: KST3903 741i KST3904 npn transistor dc 558 sot23 marking JR
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Transistor 3904

Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N3906

Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
Contextual Info: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage

IMX17

Abstract: 2SD1484K dual transistor
Contextual Info: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA „ EQUIVALENT CIRCUITS

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N3904

Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA

transistor pnp 3906

Abstract: transistor c 3906 transistor 3906 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 2N3906 3906 pnp 3906 TRANSISTOR
Contextual Info: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Emitter Voltage: Veto* 40V • Collector DiMipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage

RB521S-30

Abstract: UML12N
Contextual Info: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode

BFT93

Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.