TRANSISTOR 3683 Search Results

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

k 3683 transistor

Abstract: MJ-13080
Contextual Info: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,

Contextual Info: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been

TP10N10

Abstract: mtp10n08 10n08 mtp10n10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S T M O S P O W E R FETs 10 A M P E R E S T h e se T M O S P o w e r FETs are d e s ig n e d fo r m e d iu m v o lta g e ,

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –

eeprom programmer schematic

Abstract: XC9500 CPLD flash erasable cpld VTA 55
Contextual Info: FastFLASH: A New Electrically Erasable CPLD Technology  XBRF010 October 1, 1996 Version 1.0 Application Brief Summary The Xilinx FastFLASH technology, used in the XC9500 family, provides key advantages in reliability, density, and performance. This overview describes the FastFLASH process technology and compares it with EEPROM technology.

XC9500

Abstract: eeprom programmer schematic
Contextual Info: FastFLASH: A New Electrically Erasable CPLD Technology  XBRF010 January, 1997 Version 1.0 Application Brief Summary The Xilinx FastFLASH technology, used in the XC9500 family, provides key advantages in reliability, density, and performance. This overview describes the FastFLASH process technology and compares it with EEPROM technology.

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

JE13009

Abstract: transistor MJE13009
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet motorola Prtforrod Davie« S W IT C H M O D E Se rie s N PN Silicon Power Transistors The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

shockley diode

Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
Contextual Info: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

30343

Abstract: TIP55A p6020 tip55 30343 power
Contextual Info: TEXAS INSTR -COPTO} b5 DE |flcit117Eb 003bfl3b 8 9 & 1 7 2 6 TEXAS INSTR COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS T - ' . 5 3 ~ * l{ R EV ISED O CTOBER 1984 • Min V B R )C E O °f 2 50 V to 4 0 0 V • 50 W at 1 0 0 ° C C ase Temperature

k 3683 transistor

Abstract: transistor B 1184 transistor k 3683 CF940 OJS-OO transistor 3683 telefunken ta 250
Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • fi^EQD^b 0DGS3RQ ^ ■ ALG6 CF 940 Marked with: CF 6 M electronic Creative Technologies T 3 - - / - N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G H z in com m on Gate 1 configuration;

TIP55A

Abstract: TIP58A d03b TIP55 TIP142 40960 rca TIP56A TIP57A TIP56 TIP5
Contextual Info: TEXAS INSTR -COPTO* 89^1726 TEXAS "b5 INSTR DE 00 3 ^5 3 ^ COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS 3 3 ~ * l R EV ISED O CTO BE R 1 9 8 4 Min V(BR)CEO 2 5 0 v to 4 0 0 V 50 W a t 100 ° C C ase Temperature 10 A Peak Collector Current

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

tic 1260 scr texas

Abstract: sine wave inverter tl494 circuit diagram PIN DETAILS OF SCR TY 6004 tl494 lm324 dc to ac inverters SCR TY 6004 how the TL494 regulate lm324 dc to ac inverters diagram MC1723CP equivalent tl494 inverter sg3526 inverter schematic circuit diagram
Contextual Info: SECTION 1 BASIC LINEAR REGULATOR THEORY A. IC Voltage Regulator The basic functional block diagram of an integrated circuit voltage regulator is shown in Figure 1-1. It consists of a stable reference, whose output voltage is Vref, and a high gain error amplifier. The output

Contextual Info: Bulletin No. PSAB-D Drawing No. LP0443 Released 05/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net INDUCTIVE PROXIMITY SENSORS     SENSE FERROUS & NON-FERROUS METAL OBJECTS TO “ZERO SPEED” 2-WIRE CURRENT SOURCE (NAMUR) & 3-WIRE NPN TRUE

Contextual Info: Bulletin No. PSAFP- A Drawing No. LP0589 Released 03/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net “FLAT PACK” RECTANGULAR INDUCTIVE PROXIMITY SENSORS      IDEAL FOR LIMITED SPACE APPLICATIONS SENSE FERROUS & NON-FERROUS METAL OBJECTS TO

Contextual Info: Bulletin No. PRM/RRM-B Drawing No. LP0522 Released 06/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODELS PRM & RRM – MINIATURE DC POWERED PHOTO-ELECTRIC SENSOR     GENERAL DESCRIPTION +10 to +30 VDC OPERATION WITH REVERSE POLARITY

Rotary Sensor quadrature .5 inch shaft 500 pulses per revolution

Contextual Info: Bulletin No. ZPJ-C Drawing No. LP0723 Released 03/14 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODELS ZPJ - LARGE THRU-BORE ROTARY PULSE GENERATOR GENERAL DESCRIPTION The Model ZPJ ia a thru-bore encoder with a bore of 0.625" (15.875 mm).

TIP-52

Abstract: tip51 tip54 TIP52
Contextual Info: TEXAS INSTR -C0PT03- Ô 961726 i. ' t * TEXAS bE IN S T R DE B ô T t i l T B h □□3bfl3D 62C 3 6 8 3 0 O P T O TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - *• R E V IS E D O C T O B E R 1 9 8 4 • 1 0 0 W at 2 5 ° C Case Tem perature

Contextual Info: F100K INTRODUCTION Competitive pressure in the data processing industry, with ever-increasing data volumes and new architec­ tures, has stimulated the need for faster processing rates, higher machine densities, and greater system reliability. These requirements can only be met by the use of higher speed integrated circuits with more onchip integration and multipurpose logic functions. Advanced packaging techniques and optimum system

Contextual Info: Bulletin No. PES/DC-C Drawing No. LP0156 Released 04/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net COMPACT DC POWERED PHOTO-ELECTRIC SENSORS       RETROREFLECTIVE, PROXIMITY (DIFFUSE) & OPPOSED BEAM PAIRS MODULATED LED LIGHT BEAMS FOR IMMUNITY TO AMBIENT

Contextual Info: Bulletin No. PSAH-B Drawing No. LP0675 Released 03/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL PSAH - HALL EFFECT SPEED SENSOR The Hall Effect speed sensor (PSAH) is ideal for sensing steel gears or other ferrous targets from 0 to 10 KHz. This sensor does not have a minimum