TRANSISTOR 33W Search Results

TRANSISTOR 33W Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 33W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Di 762 transistor Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33 Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System	Original	PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33	PDF
transistor c 933 Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System	Original	PHl819-33 Tl50M50A AlC100A transistor c 933 transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN	PDF
Contextual Info: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33	PDF
Contextual Info: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching	Original	PH1920-33	PDF
PH1920-33 Contextual Info: PH1920-33 Wireless Bipolar Power Transistor 33W, 1930-1900 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter class AB operation Internal input and output impedance matching	Original	PH1920-33 PH1920-33	PDF
33w NPN Abstract: Pacific Wireless PH1819-33 Contextual Info: PH1819-33 Wireless Bipolar Power Transistor 33W, 1805-1880 MHz M/A-COM Products Released - Rev. 08.07 Outline Drawing Features • • • • • • NPN silicon microwave power transistor Common emitter Class AB operation Internal input and output impedance matching	Original	PH1819-33 33w NPN Pacific Wireless PH1819-33	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
transistor j5 Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5 Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System	Original		PDF
1N4Z45 Abstract: T33 transistor Contextual Info: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g	OCR Scan	PH1819-33 1N4Z45 T33 transistor	PDF
Contextual Info: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D	PDF
Contextual Info: Coming Attractions m an A M P com pany Wireless Bipolar Power Transistor, 45W 1930-1990 MHz PH1920-45 V 1.00 Features • • • • • NPN Silicon Power Transistor Com m on Emitter Class AB O peration Internal Input and O u tp u t Im pedance Matching Diffused Emitter Ballasting	OCR Scan	PH1920-45	PDF
WP-22 Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz	Original	RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240	PDF
Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz	Original	RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240	PDF

2N6111 Abstract: 2N6288 Contextual Info: 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications DIM A B C E F G H J K L M N MIN 14.42 9,63 3.56 MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2.03 2,92	OCR Scan	2N6288 2N6288 2N6111 2N6111	PDF
Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 2 7 14 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM, RF, MIX, IF AM PLIFIER APPLICATIONS • • + 0.5 2 .5 - 0 .3 Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)	OCR Scan	2SC2714 100MHz)	PDF
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002	PDF
m57745 Contextual Info: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm PIN : Pin VBB d VCC1 ®VCC2 ®Po ©GND : RF INPUT : BASE BIAS : 1st. DC SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25'C unless otherwise noted)	OCR Scan	M57745 430-450MHZ, m57745	PDF
430-450MHZ Abstract: tc 122 25 6d Contextual Info: MITSUBISHI RF POWER MODULE M57745 430-450MHz, 12.5V, 33W, SSB MOBILE RADIO PIN : P in :R F INPUT VBB : BASE BiAS SUPPLY ®VCC1 : 1 s t DC SUPPLY 0 V C C 2 : 2nd. DC SUPPLY ®PO : RF O U TPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 t; unless otherwise noted	OCR Scan	M57745 430-450MHz, 430-450MHZ tc 122 25 6d	PDF
transistor tl 430 c Abstract: M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC Contextual Info: MITSUBISHI RF POWER MODULE M57745 430-450MHZ, 12.5V, 33W, SSB MOBILE RADIO O U TLIN E DR AW ING D im ensions in mm PIN : P in RF INPUT ©VBB BASE BIAS SUPPLY VCC1 1st. DC SUPPLY @ VCC2 2nd. DC SUPPLY ©PO RF OUTPUT ©GND FIN A B SO LU TE M AXIM UM R A TING S Tc = 2 5 unless otherwise noted	OCR Scan	M57745 430-450MHZ, transistor tl 430 c M57745 p01 transistor transistor ZG o7040 12C TRANSISTOR TRANSISTOR JC	PDF
Contextual Info: MITSUBISHI RF POWER MODULE M57745 4 3 0 -4 5 0 M H Z , O U TLIN E DR AW ING 12.5V, 33W, SSB MOBILE RADIO Dimensions in mm PIN : Pin <2>v b b vcci @VCC2 ®PO ©GND RF INPUT BASE BIAS SUPPLY 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN A B SO LU TE M AXIM UM RA TIN G S Tc = 2 5 <1C unless otherwise noted	OCR Scan	M57745	PDF
RA33H1516M1 Abstract: RA33H1516M1-101 VDD1015 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to	Original	RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015	PDF
ra33h1516m1 Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to	Original	RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene	PDF
ra33h1516m1 Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to	Original	RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF	PDF

TRANSISTOR 33W Search Results

TRANSISTOR 33W Result Highlights (5)

TRANSISTOR 33W Datasheets Context Search

Di 762 transistor

transistor c 933

PH1920-33

33w NPN

2N2222A 338

y51 h 120c

transistor j5

1N4Z45

WP-22

2N6111

free transistor equivalent book 2sc

m57745

430-450MHZ

transistor tl 430 c

RA33H1516M1

ra33h1516m1

ra33h1516m1