TRANSISTOR 313 SOT Search Results

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

transistor 313 smd

Abstract: BUK9515-100A BUK9615-100A SC18
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using

11105 IC

Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Contextual Info: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code

Contextual Info: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and

Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323

transistor Common Base amplifier

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.

transistor 313 sot23

Abstract: npn 313 sot-23 DARLINGTON SOT-23 darlington sot23 pnp SOT 363 darlington
Contextual Info: Type Number Collector to Emitter Voltage DC Current Gain Saturation Voltage, Collector to Emitter Gain Bandwidth Product VCEO hFE @ VCEO / IC VCE SAT @ IC / IB fT @ VCE / IC V Min-Max V / mA Max. V mA / mA MHZ V / mA PNP Transistors / SOT-23 MMBT2907A MMBT3906

transistor 5d

Abstract: BC808W 5H MARKING BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
Contextual Info: P jjjN p ^ e n jjÇ o n d u c to i« ^ Ç ^ 7 1 1 □ fi 2 b QObf lMOT 3Tfl H P H IN PNP general purpose transistor FEATURES ^^P|j°duc^P8çfficatlon BC807W; BC808W PIN CONFIGURATION • High current • S-m ini package. DESCRIPTION PNP transistor in a plastic SOT323

Transistor marking S

Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
Contextual Info: bhSa^l P hilip s Sem iconductors 002M443 STT IAPX Product specification PNP general purpose transistor BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES b?E PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323

BU826

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application.

TRANSISTOR a32

Abstract: g3ki A32 SOT23
Contextual Info: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min) at lc = 1.0 mA 1, 9 ± 0 ,2 10 .9 5 0 .9 5 f T excellent gain linearity from lOOjiAto

Contextual Info: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to

4139 temperature

Abstract: RN5RF RN5RF30A RN5RF50A 75W PNP
Contextual Info: /2:#5,33/ #92/7$*( 5(*8/$725#:,7+#(;7(51$/ 75$16,6725 5185 #6(5,(6 $33/,&$7,21#0$18$/ NO. EA-043-0006 LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR 5185)#6(5,(6 OUTLINE /

W1p TRANSISTOR

Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Contextual Info: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF

Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318

TRANSISTOR 318

Abstract: BSP 312 BSP318 MU diode MARKING CODE
Contextual Info: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223

Contextual Info: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of

Contextual Info: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of

BU826A

Abstract: BU826 BD227 FL01 5A/M39029/BU826A
Contextual Info: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.

BFQ23C

Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

Transistor SSI 5504 175

Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

BC847BS

Abstract: NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F
Contextual Info: BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 03 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.