TRANSISTOR 3050 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C

TIP32CG

Abstract: TIP32C Silicon PNP Epitaxial Planar Transistor to220 TIP32CL-TN3-R TIP31C TIP32C-TN3-R TIP31c PNP Transistor TIP32CL UTCTIP32C
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

utc 2030

Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal

Transistor J550

Abstract: j584 transistor
Contextual Info: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

TRANSISTOR T-03

Abstract: TRANSISTOR 618
Contextual Info: KSP42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Coilector-Em itter Voltage: VCeo“ KSP42: 300V KSP43: 200V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25T:) C haracteristic Sym bol Collector Base Voltage

Contextual Info: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com ­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

marking mitsubishi

Abstract: oc pnp sc62
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1948 FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1948 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING unit mm designed with high voltage, high hFe and high fr.

MPS8098

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

Contextual Info: N AMER PHILIPS/DISCRETE bRE D bbS3R3i 0030503 Rob Product Specification Philips Sem iconductors BUK441-100A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

K1 transistor

Contextual Info: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH 0 POW ER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage VcBO Symbol 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current VcEO 60 V V ebo 6 V lc 3 A Base Current

A 3131

Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Contextual Info: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

BLS7G2933S-150

Abstract: a 3150 data sheet JESD625-A
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

amplifier TRANSISTOR 12 GHZ

Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

BLS7G2933S-150

Abstract: radar amplifier s-band SOT922-1 JESD625-A
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state