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    TRANSISTOR 2Y Search Results

    TRANSISTOR 2Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR 2Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


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    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611 PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


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    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488varistor ruse110ntransistor2sc54872sa2003se090nhigh voltage transistorse090rbv-4062sc5586 PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


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    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa14882sc5586transistor 2sc5586diode ru 3am2sa2003microwave oven diodesingle phase bridge rectifier ic with output 1a2sc5487rg-2a diodedual mosfet 606tfd312s-f PDF

    TRANSISTOR SMD 2y

    Abstract: smd transistor 2y smd transistor marking 2y 2Y smd smd marking 2y CMBT3905
    Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


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    iso/ts16949ot-23cmbt3905c-120+5transistor smd 2ysmd transistor 2ysmd transistor marking 2y2y smdsmd marking 2y PDF

    Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)


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    cmbt3905 PDF

    smd transistor marking 2y

    Abstract: TRANSISTOR SMD 2y smd transistor 2y 2Y smd CMBT3905
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    ot-23cmbt3905c-120smd transistor marking 2y+3transistor smd 2ysmd transistor 2y2y smd PDF

    Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y


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    ot-23cmbt3905c-120 PDF

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


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    diode ru 3amdiode ru 4brg-2a diodediode ru 4am+6mn638sfmm-32spf0001red green green zener diodediode rj 4bsta464c PDF

    Contextual Info: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    cmbt390523fl33t4d000fi2023a33t4 PDF

    Contextual Info: CI CMBT3905 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.4 2.6 2.4 1.2 R0.1 -004 ' _L02 0.60 0.40 0.70


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    cmbt3905 PDF

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


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    pa861tc2sc54362sc5786s21e2+24550 necic 7432 data PDF

    CMBT3905

    Contextual Info: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.48 038 0.14 0.09 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2 .4 _L02 ' € 0.60 0.40


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    cmbt3905100na PDF

    Contextual Info: MPSA44 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package: TO-92 * Complement To MPSA94 * High Collector-Emitter Voltage Vceo=400V * Collector Dissipation Pc=625mA Ta=25<>C


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    mpsa44mpsa94625ma300us+2100ua100ma PDF

    transistor BC 247

    Abstract: BC 247 b transistor
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445


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    nte7442614-leadnte74ls44516-lead+8nte74s47424-leadnte74s4754096-bitnte74hc57420-leadtransistor bc 247bc 247 b transistor PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    php33n10t0220ab PDF

    tme 126

    Abstract: MGW12N120 IC9012 Bipolar WPC
    Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.


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    mgw12n120o-24710usminimumtme 126+2ic9012bipolar wpc PDF

    NTE74HC14

    Abstract: NTE74HCt14 NTE74C14 NTE7420 NTE7421 NTE74HC11 NTE7413 NTE7410 NTE7416 NTE74C20
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate u r i NTE7411, MTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11


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    nte7410nte74c1014-leadnte74h10+14nte74hc10nte74ls10nte74s10nte7411mte74h11nte74hc14nte74hct14nte74c14nte7420nte7421nte74hc11nte7413nte7416nte74c20 PDF

    NTE7404

    Abstract: NTE74HC04 transistor 6y NTE7406 NTE74LS05 NTE7400 NTE7408 NTE7409 NTE74LS04 NTE74LS00
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7214 16-Lead DIP, See Diag. 249 TRI-STATE Dual 4:1 Multiplexer NTE740Q, NTE74C00, 14-Lead DIP, See Diag. 247 NTE74H00, NTE74HC00, NTE74HCT00, NTE74LS00, NTE74S00 14-Lead DIP, See Diag. 247 NTE7401,


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    nte721416-leadnte74h0114-lead+13nte7404nte74c04nte74h04nte74hc04nte74hct04transistor 6ynte7406nte74ls05nte7400nte7408nte7409nte74ls04nte74ls00 PDF

    NTE7493A

    Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86


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    nte748516-leadnte74ls85nte74s85+13nte74c85nte74s6nte74hc8614-leadnte74ls86nte7493ante7490nte74ls90nte7495nte74s86nte7486nte7489nte74c90 PDF

    CBC 557 C

    Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
    Contextual Info: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB


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    cbc 557 ccbc 557af1391j 400+6cbc 557 btfk af7213672136 paf 139germanium-pnp-hf-transistor PDF

    NTE74LS244

    Abstract: NTE74LS248 NTE74LS247 NTE74C221 NTE74HC244 NTE74LS245 NTE74LS240 NTE74HC259 NTE74HCT244 NTE74LS221
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register NTE74221, 16-Lead DIP, See Diag. 249 NTE74C221, NTE74LS221 Dual Monostable Multivibrator Q V cc ^ Shift/Load 3 QH ^ Input G


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    nte7419924-leadnte7422116-lead+14nte74c221nte74ls221nte74c24020-leadnte74hc240nte74hct240nte74ls244nte74ls248nte74ls247nte74hc244nte74ls245nte74ls240nte74hc259nte74hct244 PDF

    NTE74LS21

    Abstract: NC3A
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7410, NTE74C10, 14-Lead DIP, See Diag. 247 NTE74H10, NTE74HC10, NTE74LS10, NTE74S10 Triple 3-Input Positive NAND Gate NTE7411, NTE74H11, 14-Lead DIP, See Diag. 247 NTE74HC11, NTE74LS11, NTE74S11 Triple 3-Input Positive AND Gate


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    nte7410nte74c1014-leadnte74h10+7nte74hc10nte74ls10nte74s10nte7411nte74h11nte74ls21nc3a PDF

    ADI1797

    Abstract: sot 223
    Contextual Info: . Order this data sheet by MMH107T1/D MOTOROLA SEMICONDUCTOR ● TECHNICAL DATA a Advance Information Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount m This TMOS medium Dower field effect transistor is desianed for


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    mmh107t1/dot-223mk145bp4-32-l+2adi1797sot 223 PDF

    nte74s571

    Abstract: NTE74HC573 NTE74HC574 NTE74HCT573 NTE74S474 NTE74S573 512x8 PROM NTE74LS541 NTE74S472 NTE74LS490
    Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling NTE74LS445 16-Lead DIP, See Diag. 249 BCD-to-Decimal Decoder/Driver w/Open Collector Outputs NTE74S472 20-Lead DIP, See Diag. 294


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    nte7442614-leadnte74s474nte74s475+134096-bit512x8nte74ls44516-leadnte74s571nte74hc573nte74hc574nte74hct573nte74s573512x8 promnte74ls541nte74s472nte74ls490 PDF