TRANSISTOR 2SK19 Search Results

TRANSISTOR 2SK19 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2SK19 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1954 Abstract: 2SK1954-Z MEI-1202 TEA-1035 Contextual Info: DATA SHEET ir NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z » - M SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K1954 is N -channel M O S Field Effect Transistor in millimeters	OCR Scan	2SK1954, 2SK1954-Z 2SK1954 IEI-1209) 2SK1954-Z MEI-1202 TEA-1035	PDF
2SK1954 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high	Original	2SK1954 1954-Z	PDF
2SK1954 Abstract: 2SK1954-Z MEI-1202 TEA-1035 Contextual Info: r NEC - • - DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1954 is N-channel MOS Field Effect Transistor designed for high voltage switching applications.	OCR Scan	2SK1954, 2SK1954-Z 2SK1954 IEI-1209) MEI-1202 TEA-1035	PDF
2SK1953 Abstract: transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.	OCR Scan	2SK1953 IEI-1209) transistor 7905 nec 7905 7905 Nec MEI-1202 TEA-1035 TC-2447	PDF
Y243 Abstract: 2SK1992 2SK1993 TEA-1035 t3gu Contextual Info: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2SK1992/2SK1993 SWITCHING N-CHANIMEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.	OCR Scan	2SK1992/2SK1993 IEI-1209) Y243 2SK1992 2SK1993 TEA-1035 t3gu	PDF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1954,1954-Z SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION <R> PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 voltage switching applications. +0.2 The 2SK1954 is N-channel MOS Field Effect Transistor designed for high	Original	2SK1954 1954-Z O-252	PDF
transistor NEC D 882 p Abstract: nec d 882 p nec d 882 p transistor transistor nec d 882 p transistor transistor nec d 882 NEC 882 p 2SK19 transistor NEC 882 p c 879 transistor transistor+2sk Contextual Info: MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS Th e 2SK1954 is N-channel M O S Field Effect Transistor designed for high voltage sw itching applications. tin millimeters	OCR Scan	2SK1954, 2SK1954-Z 2SK1954 2SK1954 IEI-1209> transistor NEC D 882 p nec d 882 p nec d 882 p transistor transistor nec d 882 p transistor transistor nec d 882 NEC 882 p 2SK19 transistor NEC 882 p c 879 transistor transistor+2sk	PDF
NEC JAPAN 7915 Abstract: nec 7915 TC-7915 K1994 2sk1994 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1994 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1994 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance	OCR Scan	2SK1994 2SK1994 IEI-1209) NEC JAPAN 7915 nec 7915 TC-7915 K1994	PDF
2SK1995 Abstract: tea 2453 MEI-1202 TEA-1035 transistor 2sk1995 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance	OCR Scan	2SK1995 IEI-1209) tea 2453 MEI-1202 TEA-1035 transistor 2sk1995	PDF
K1995 Abstract: 2sk1995 TC-2453 ME112 transistor 2sk1995 ME1120 SAQ10 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance	OCR Scan	2SK1995 K1995 IEI-1209) 2sk1995 TC-2453 ME112 transistor 2sk1995 ME1120 SAQ10	PDF
nec 7905 Abstract: 2SK1953 7905 Nec TC-7905 applications OF IC 7905 TC-2447 Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1953 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1953 is N -channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance	OCR Scan	2SK1953 2SK1953 IEI-1209) nec 7905 7905 Nec TC-7905 applications OF IC 7905 TC-2447	PDF
2SK1993 Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR i 2SK1992/2SK1993 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1992/2SK1993 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed fo r high voltage switching applications.	OCR Scan	2SK1992/2SK1993 2SK1992/2SK1993 IEI-1209) 2SK1993	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent	PDF

sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
2sk1060 Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234 Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) \|Yfs1\| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104	Original	2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
700 v power transistor Abstract: SB07 Contextual Info: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560	OCR Scan	FP101 2SB1121 SB05-05CP 2SB1396 SB07-03C 2SD1621 SB07-03C FP102 FP301 250mm2 700 v power transistor SB07	PDF
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)	OCR Scan	2SK1928 0021fc	PDF
2SK192A Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature	OCR Scan	2SK192A 100MHz) 55MAX. 100MHz 2SK192A	PDF
Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 0.55MAX. 0.4 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature	OCR Scan	2SK192A 55MAX. 100MHz) 100MHz	PDF
nec 7912 Abstract: TRANSISTOR 7912 2SK1988 2SK1989 MEI-1202 TEA-1035 TC-7912 Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ,r NEC - » - MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989	OCR Scan	2SK1988, 2SK1988 2SK1989 nec 7912 TRANSISTOR 7912 MEI-1202 TEA-1035 TC-7912	PDF
2SK1913 Abstract: BTB 600 BR BTb 600 Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance	OCR Scan	2SK1913 100jiA 20kii) D021LÃ BTB 600 BR BTb 600	PDF
2SK1930 Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1930 2SK1930	PDF

TRANSISTOR 2SK19 Search Results

TRANSISTOR 2SK19 Result Highlights (5)

TRANSISTOR 2SK19 Datasheets Context Search

2SK1954

2SK1954

2SK1954

2SK1953

Y243

transistor NEC D 882 p

NEC JAPAN 7915

2SK1995

K1995

nec 7905

2SK1993

2sb504

2SA1444 equivalent

sx3704

2sk1060

2SC 8550

700 v power transistor

2SK192A

nec 7912

2SK1913

2SK1930